Datasheets
IXFT12N90Q by:

Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

Part Details for IXFT12N90Q by Littelfuse Inc

Overview of IXFT12N90Q by Littelfuse Inc

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Applications Automotive

Part Details for IXFT12N90Q

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IXFT12N90Q Part Data Attributes

IXFT12N90Q Littelfuse Inc
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IXFT12N90Q Littelfuse Inc Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer LITTELFUSE INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFT12N90Q

This table gives cross-reference parts and alternative options found for IXFT12N90Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFT12N90Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFV12N100PS Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN IXYS Corporation IXFT12N90Q vs IXFV12N100PS
APT1001RBLC Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Advanced Power Technology IXFT12N90Q vs APT1001RBLC
APT10086BVRG Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc IXFT12N90Q vs APT10086BVRG
IXFV12N100P Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN IXYS Corporation IXFT12N90Q vs IXFV12N100P
IXFH12N90P Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 Littelfuse Inc IXFT12N90Q vs IXFH12N90P
IXFX12N90Q Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN IXYS Corporation IXFT12N90Q vs IXFX12N90Q
IXFH12N100Q Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc IXFT12N90Q vs IXFH12N100Q
APT1001RBVFRG Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc IXFT12N90Q vs APT1001RBVFRG
SHD2397F Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN Sensitron Semiconductors IXFT12N90Q vs SHD2397F
APT1001R1BFLC Power Field-Effect Transistor, 11A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Advanced Power Technology IXFT12N90Q vs APT1001R1BFLC

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