Part Details for APT1001R1BFLC by Microsemi Corporation
Overview of APT1001R1BFLC by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for APT1001R1BFLC
APT1001R1BFLC CAD Models
APT1001R1BFLC Part Data Attributes
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APT1001R1BFLC
Microsemi Corporation
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Datasheet
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APT1001R1BFLC
Microsemi Corporation
11A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Part Package Code | TO-247 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH VOLTAGE, FREDFET | |
| Avalanche Energy Rating (Eas) | 1210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 1.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT1001R1BFLC
This table gives cross-reference parts and alternative options found for APT1001R1BFLC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1001R1BFLC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFH12N90P | Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | Littelfuse Inc | APT1001R1BFLC vs IXFH12N90P |
| SHD2396FS | Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN | Sensitron Semiconductors | APT1001R1BFLC vs SHD2396FS |
| IXFV12N100PS | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN | IXYS Corporation | APT1001R1BFLC vs IXFV12N100PS |
| IXFH12N100Q | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | APT1001R1BFLC vs IXFH12N100Q |
| IXFT12N90Q | Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | APT1001R1BFLC vs IXFT12N90Q |
| APT10086BVFRG | Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | APT1001R1BFLC vs APT10086BVFRG |
| APT10086BVR | Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microsemi Corporation | APT1001R1BFLC vs APT10086BVR |
| APT1001R1SN | Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | Advanced Power Technology | APT1001R1BFLC vs APT1001R1SN |
| SHD2396F | Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN | Sensitron Semiconductors | APT1001R1BFLC vs SHD2396F |
| APT1001RBLC | Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Advanced Power Technology | APT1001R1BFLC vs APT1001RBLC |