IXTP1N100
Description: Power Field-Effect Transistor,

Overview of IXTP1N100 by Littelfuse Inc

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 9 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

CAD Models for IXTP1N100 by Littelfuse Inc
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Part Data Attributes for IXTP1N100 by Littelfuse Inc

IXTP1N100
Littelfuse Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
LITTELFUSE INC
Package Description
TO-220AD, 3 PIN
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
LITTELFUSE
Avalanche Energy Rating (Eas)
200 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
1000 V
Drain Current-Max (ID)
1.5 A
Drain-source On Resistance-Max
11 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
6 A
Surface Mount
NO
Terminal Finish
Matte Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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Alternate Parts for IXTP1N100

This table gives cross-reference parts and alternative options found for IXTP1N100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP1N100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IXTA1N100 Power Field-Effect Transistor, Littelfuse Inc IXTP1N100 vs IXTA1N100
IXTT1N100 Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation IXTP1N100 vs IXTT1N100
IXTA1R4N100P Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Littelfuse Inc IXTP1N100 vs IXTA1R4N100P
IXTA1R4N100P Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IXYS Corporation IXTP1N100 vs IXTA1R4N100P
IXTH1N100 Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, Littelfuse Inc IXTP1N100 vs IXTH1N100
IXTY1R4N100P Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, 3 PIN Littelfuse Inc IXTP1N100 vs IXTY1R4N100P
IXTY1R4N100P Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, 3 PIN IXYS Corporation IXTP1N100 vs IXTY1R4N100P
IXTP1N100 Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IXYS Corporation IXTP1N100 vs IXTP1N100
IXTT1N100 Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc IXTP1N100 vs IXTT1N100

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