There are no models available for this part yet.
Overview of IXTP1N100 by Littelfuse Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 9 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Medical Imaging
Robotics and Drones
CAD Models for IXTP1N100 by Littelfuse Inc
Part Data Attributes for IXTP1N100 by Littelfuse Inc
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Not Recommended
|
Ihs Manufacturer
|
LITTELFUSE INC
|
Package Description
|
TO-220AD, 3 PIN
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
LITTELFUSE
|
Avalanche Energy Rating (Eas)
|
200 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
1000 V
|
Drain Current-Max (ID)
|
1.5 A
|
Drain-source On Resistance-Max
|
11 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM)
|
6 A
|
Surface Mount
|
NO
|
Terminal Finish
|
Matte Tin (Sn)
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IXTP1N100
This table gives cross-reference parts and alternative options found for IXTP1N100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP1N100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTA1N100 | Power Field-Effect Transistor, | Littelfuse Inc | IXTP1N100 vs IXTA1N100 |
IXTT1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXTP1N100 vs IXTT1N100 |
IXTA1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXTP1N100 vs IXTA1R4N100P |
IXTA1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IXYS Corporation | IXTP1N100 vs IXTA1R4N100P |
IXTH1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | Littelfuse Inc | IXTP1N100 vs IXTH1N100 |
IXTY1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, 3 PIN | Littelfuse Inc | IXTP1N100 vs IXTY1R4N100P |
IXTY1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, 3 PIN | IXYS Corporation | IXTP1N100 vs IXTY1R4N100P |
IXTP1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXTP1N100 vs IXTP1N100 |
IXTT1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXTP1N100 vs IXTT1N100 |
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