Part Details for JAN2N6802 by Defense Logistics Agency
Overview of JAN2N6802 by Defense Logistics Agency
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for JAN2N6802
JAN2N6802 CAD Models
JAN2N6802 Part Data Attributes
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JAN2N6802
Defense Logistics Agency
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Datasheet
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JAN2N6802
Defense Logistics Agency
Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DEFENSE LOGISTICS AGENCY | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 11 A | |
| Qualification Status | Qualified | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JAN2N6802
This table gives cross-reference parts and alternative options found for JAN2N6802. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N6802, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFF430-JQR-BR1 | 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JAN2N6802 vs IRFF430-JQR-BR1 |
| JAN2N6802 | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corporation | JAN2N6802 vs JAN2N6802 |
| JANTX2N6802 | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corporation | JAN2N6802 vs JANTX2N6802 |
| 2N6802R1 | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Resistors | JAN2N6802 vs 2N6802R1 |
| UFNF430 | Power Field-Effect Transistor, 2.75A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corp (RETIRED) | JAN2N6802 vs UFNF430 |
| 2N6802-JQR-A | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Resistors | JAN2N6802 vs 2N6802-JQR-A |
| 2N6802.MODR1 | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Resistors | JAN2N6802 vs 2N6802.MODR1 |
| 2N6802-JQRR1 | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Resistors | JAN2N6802 vs 2N6802-JQRR1 |
| 2N6802-QR-BR1 | 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JAN2N6802 vs 2N6802-QR-BR1 |
| IRFF430 | 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Rochester Electronics LLC | JAN2N6802 vs IRFF430 |