Part Details for K4D263238E-GC22 by Samsung Semiconductor
Overview of K4D263238E-GC22 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Part Details for K4D263238E-GC22
K4D263238E-GC22 CAD Models
K4D263238E-GC22 Part Data Attributes
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K4D263238E-GC22
Samsung Semiconductor
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Datasheet
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K4D263238E-GC22
Samsung Semiconductor
DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, FBGA-144
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | FBGA-144 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.55 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 450 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | S-PBGA-B144 | |
JESD-609 Code | e0 | |
Length | 12 mm | |
Memory Density | 134217728 bit | |
Memory IC Type | GDDR1 DRAM | |
Memory Width | 32 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 144 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 65 °C | |
Operating Temperature-Min | ||
Organization | 4MX32 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LFBGA | |
Package Equivalence Code | BGA144,12X12,32 | |
Package Shape | SQUARE | |
Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.4 mm | |
Self Refresh | YES | |
Sequential Burst Length | 2,4,8,FP | |
Standby Current-Max | 0.12 A | |
Supply Current-Max | 1.29 mA | |
Supply Voltage-Max (Vsup) | 2.94 V | |
Supply Voltage-Min (Vsup) | 2.66 V | |
Supply Voltage-Nom (Vsup) | 2.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 12 mm |
Alternate Parts for K4D263238E-GC22
This table gives cross-reference parts and alternative options found for K4D263238E-GC22. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4D263238E-GC22, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HY5DU283222BF-25 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, MO-205DAE, FBGA-144 | SK Hynix Inc | K4D263238E-GC22 vs HY5DU283222BF-25 |
M13S128324A-6BIG | DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, MO-205, FBGA-144 | Elite Semiconductor Memory Technology Inc | K4D263238E-GC22 vs M13S128324A-6BIG |
HY5DS283222BFP-28 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 | SK Hynix Inc | K4D263238E-GC22 vs HY5DS283222BFP-28 |
NT5DS4M32EG-33 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, LEAD FREE, FBGA-144 | Nanya Technology Corporation | K4D263238E-GC22 vs NT5DS4M32EG-33 |
K4D263238I-GC400 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | K4D263238E-GC22 vs K4D263238I-GC400 |
HY5DW283222BF-28 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, MO-205DAE, FBGA-144 | SK Hynix Inc | K4D263238E-GC22 vs HY5DW283222BF-28 |
EDD1232AABH-7B-E | DDR DRAM, 4MX32, 0.75ns, CMOS, PBGA144, LEAD FREE, FBGA-144 | Elpida Memory Inc | K4D263238E-GC22 vs EDD1232AABH-7B-E |
HY5DW283222BF-33 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, MO-205DAE, FBGA-144 | SK Hynix Inc | K4D263238E-GC22 vs HY5DW283222BF-33 |
NT5DS4M32EF-33 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Nanya Technology Corporation | K4D263238E-GC22 vs NT5DS4M32EF-33 |
HY5DU283222BFP-5 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, MO-205DAE, FBGA-144 | SK Hynix Inc | K4D263238E-GC22 vs HY5DU283222BFP-5 |