Part Details for K4D551638D-LC600 by Samsung Semiconductor
Overview of K4D551638D-LC600 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for K4D551638D-LC600
K4D551638D-LC600 CAD Models
K4D551638D-LC600 Part Data Attributes:
|
|
K4D551638D-LC600
Samsung Semiconductor
Buy Now
Datasheet
|
Compare Parts:
K4D551638D-LC600
Samsung Semiconductor
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP66,.46 | |
| Pin Count | 66 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | GDDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 65 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.003 A | |
| Supply Current-Max | 0.2 mA | |
| Supply Voltage-Max (Vsup) | 2.625 V | |
| Supply Voltage-Min (Vsup) | 2.375 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4D551638D-LC600
This table gives cross-reference parts and alternative options found for K4D551638D-LC600. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4D551638D-LC600, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT46V16M16P-6RIT | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4D551638D-LC600 vs MT46V16M16P-6RIT |
| V58C2256164SCE6I | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC TSOP2-66 | ProMOS Technologies Inc | K4D551638D-LC600 vs V58C2256164SCE6I |
| K4H561638D-TCB30 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875, 0.65 MM PITCH, MS-024FC, TSOP2-66 | Samsung Semiconductor | K4D551638D-LC600 vs K4H561638D-TCB30 |
| EDD2516AKTA-6BLI | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Elpida Memory Inc | K4D551638D-LC600 vs EDD2516AKTA-6BLI |
| NT5DS16M16CS-6KI | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, GREEN, TSOP2-66 | Nanya Technology Corporation | K4D551638D-LC600 vs NT5DS16M16CS-6KI |
| NT5DS16M16BS-6K | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD AND HALOGEN FREE, PLASTIC, TSOP2-66 | Nanya Technology Corporation | K4D551638D-LC600 vs NT5DS16M16BS-6K |
| V58C2256164SALD-6 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, DIE-STACKED, TSOP2-66 | ProMOS Technologies Inc | K4D551638D-LC600 vs V58C2256164SALD-6 |
| K4H561638D-TLB30 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875, 0.65 MM PITCH, MS-024FC, TSOP2-66 | Samsung Semiconductor | K4D551638D-LC600 vs K4H561638D-TLB30 |
| V58C2256164SAT-6 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | K4D551638D-LC600 vs V58C2256164SAT-6 |
| N2DS25H16BT-6K | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | Nanya Technology Corporation | K4D551638D-LC600 vs N2DS25H16BT-6K |