Datasheets
K4H510438C-ZCB3T by: Samsung Semiconductor

DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60

Part Details for K4H510438C-ZCB3T by Samsung Semiconductor

Overview of K4H510438C-ZCB3T by Samsung Semiconductor

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Applications Computing and Data Storage

Part Details for K4H510438C-ZCB3T

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K4H510438C-ZCB3T Part Data Attributes

K4H510438C-ZCB3T Samsung Semiconductor
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K4H510438C-ZCB3T Samsung Semiconductor DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description BGA, BGA60,9X12,40/32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Time-Max 0.7 ns
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PBGA-B60
JESD-609 Code e3
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 4
Moisture Sensitivity Level 1
Number of Terminals 60
Number of Words 134217728 words
Number of Words Code 128000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 128MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code BGA
Package Equivalence Code BGA60,9X12,40/32
Package Shape RECTANGULAR
Package Style GRID ARRAY
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 2,4,8
Standby Current-Max 0.005 A
Supply Current-Max 0.36 mA
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM

Alternate Parts for K4H510438C-ZCB3T

This table gives cross-reference parts and alternative options found for K4H510438C-ZCB3T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510438C-ZCB3T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4H510438C-ZLB30 DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Samsung Semiconductor K4H510438C-ZCB3T vs K4H510438C-ZLB30
K4H510438C-ZCB3 DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, Samsung Semiconductor K4H510438C-ZCB3T vs K4H510438C-ZCB3
V58C2512404SAJ6 DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H510438C-ZCB3T vs V58C2512404SAJ6
K4H510438C-ZLB3 DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60 Samsung Semiconductor K4H510438C-ZCB3T vs K4H510438C-ZLB3
V58C2512404SAS6 Cache DRAM Module, 128MX4, 0.7ns, CMOS, PBGA60 ProMOS Technologies Inc K4H510438C-ZCB3T vs V58C2512404SAS6
V58C2512404SALS6 Cache DRAM Module, 128MX4, 0.7ns, CMOS, PBGA60 ProMOS Technologies Inc K4H510438C-ZCB3T vs V58C2512404SALS6
V58C2512404SALJ6 DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H510438C-ZCB3T vs V58C2512404SALJ6
V58C2512404SAF6 Cache DRAM Module, 128MX4, 0.7ns, CMOS, PBGA60 ProMOS Technologies Inc K4H510438C-ZCB3T vs V58C2512404SAF6
Part Number Description Manufacturer Compare
MT47H128M4JN-3EAT:F DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 Micron Technology Inc K4H510438C-ZCB3T vs MT47H128M4JN-3EAT:F
V59C1512404QDLF19AH DDR DRAM, 128MX4, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 ProMOS Technologies Inc K4H510438C-ZCB3T vs V59C1512404QDLF19AH
MT47H128M4F6-25:D DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc K4H510438C-ZCB3T vs MT47H128M4F6-25:D
V58C2512404SBF5 DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 ProMOS Technologies Inc K4H510438C-ZCB3T vs V58C2512404SBF5
MT47H128M4CF-25AT:F DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc K4H510438C-ZCB3T vs MT47H128M4CF-25AT:F
V59C1512404QDUP5E DDR DRAM, 128MX4, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H510438C-ZCB3T vs V59C1512404QDUP5E
V59C1512404QDUP19AI DDR DRAM, 128MX4, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H510438C-ZCB3T vs V59C1512404QDUP19AI
MT47H128M4CF-3ELAT:F DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc K4H510438C-ZCB3T vs MT47H128M4CF-3ELAT:F
MT47H128M4F6-25EL:D DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc K4H510438C-ZCB3T vs MT47H128M4F6-25EL:D
V59C1512404QCLF-37 DDR DRAM, 128MX4, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 ProMOS Technologies Inc K4H510438C-ZCB3T vs V59C1512404QCLF-37

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