Part Details for K4H510438C-ZCB3T by Samsung Semiconductor
Overview of K4H510438C-ZCB3T by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Part Details for K4H510438C-ZCB3T
K4H510438C-ZCB3T CAD Models
K4H510438C-ZCB3T Part Data Attributes
|
K4H510438C-ZCB3T
Samsung Semiconductor
Buy Now
Datasheet
|
Compare Parts:
K4H510438C-ZCB3T
Samsung Semiconductor
DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | BGA, BGA60,9X12,40/32 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.28 | |
Access Time-Max | 0.7 ns | |
Clock Frequency-Max (fCLK) | 166 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | R-PBGA-B60 | |
JESD-609 Code | e3 | |
Memory Density | 536870912 bit | |
Memory IC Type | DDR1 DRAM | |
Memory Width | 4 | |
Moisture Sensitivity Level | 1 | |
Number of Terminals | 60 | |
Number of Words | 134217728 words | |
Number of Words Code | 128000000 | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 128MX4 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | BGA | |
Package Equivalence Code | BGA60,9X12,40/32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Sequential Burst Length | 2,4,8 | |
Standby Current-Max | 0.005 A | |
Supply Current-Max | 0.36 mA | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | MATTE TIN | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM |
Alternate Parts for K4H510438C-ZCB3T
This table gives cross-reference parts and alternative options found for K4H510438C-ZCB3T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510438C-ZCB3T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
K4H510438C-ZLB30 | DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | K4H510438C-ZCB3T vs K4H510438C-ZLB30 |
K4H510438C-ZCB3 | DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, | Samsung Semiconductor | K4H510438C-ZCB3T vs K4H510438C-ZCB3 |
V58C2512404SAJ6 | DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 | ProMOS Technologies Inc | K4H510438C-ZCB3T vs V58C2512404SAJ6 |
K4H510438C-ZLB3 | DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60 | Samsung Semiconductor | K4H510438C-ZCB3T vs K4H510438C-ZLB3 |
V58C2512404SAS6 | Cache DRAM Module, 128MX4, 0.7ns, CMOS, PBGA60 | ProMOS Technologies Inc | K4H510438C-ZCB3T vs V58C2512404SAS6 |
V58C2512404SALS6 | Cache DRAM Module, 128MX4, 0.7ns, CMOS, PBGA60 | ProMOS Technologies Inc | K4H510438C-ZCB3T vs V58C2512404SALS6 |
V58C2512404SALJ6 | DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 | ProMOS Technologies Inc | K4H510438C-ZCB3T vs V58C2512404SALJ6 |
V58C2512404SAF6 | Cache DRAM Module, 128MX4, 0.7ns, CMOS, PBGA60 | ProMOS Technologies Inc | K4H510438C-ZCB3T vs V58C2512404SAF6 |