Part Details for K4S281632D-TC7C by Samsung Semiconductor
Overview of K4S281632D-TC7C by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for K4S281632D-TC7C
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, 54 Pin Plastic SMT | 36 |
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Part Details for K4S281632D-TC7C
K4S281632D-TC7C CAD Models
K4S281632D-TC7C Part Data Attributes
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K4S281632D-TC7C
Samsung Semiconductor
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Datasheet
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K4S281632D-TC7C
Samsung Semiconductor
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP54,.46,32 | |
Pin Count | 54 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 133 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
JESD-609 Code | e0 | |
Length | 22.22 mm | |
Memory Density | 134217728 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 8388608 words | |
Number of Words Code | 8000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 8MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP54,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.22 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4S281632D-TC7C
This table gives cross-reference parts and alternative options found for K4S281632D-TC7C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S281632D-TC7C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NT5SV8M16DT-75B | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Nanya Technology Corporation | K4S281632D-TC7C vs NT5SV8M16DT-75B |
K4S281632F-UC75 | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | Samsung Semiconductor | K4S281632D-TC7C vs K4S281632F-UC75 |
K4S281632F-TC75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S281632D-TC7C vs K4S281632F-TC75 |
K4S281632E-TC75T | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | Samsung Semiconductor | K4S281632D-TC7C vs K4S281632E-TC75T |
HY57V281620ETP-H | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | SK Hynix Inc | K4S281632D-TC7C vs HY57V281620ETP-H |
NT5SV8M16DS-75B | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Nanya Technology Corporation | K4S281632D-TC7C vs NT5SV8M16DS-75B |
K4S281632D-TC75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S281632D-TC7C vs K4S281632D-TC75 |
NT5SE8M16DS-75B | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Nanya Technology Corporation | K4S281632D-TC7C vs NT5SE8M16DS-75B |
MT48LC8M16A2TG-75:G | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | K4S281632D-TC7C vs MT48LC8M16A2TG-75:G |
K4S281632K-UC750 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 | Samsung Semiconductor | K4S281632D-TC7C vs K4S281632K-UC750 |