Part Details for K4S281632F-TC75 by Samsung Semiconductor
Overview of K4S281632F-TC75 by Samsung Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
TC75S102F | Toshiba Electronic Devices & Storage Corporation | Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 | |
LTC7541AJSW#PBF | Analog Devices | Imp Ind St&ard CMOS 12-B Mult | |
LTC7545ACSW#PBF | Analog Devices | Imp Ind St&ard Parallel 12-B M |
Price & Stock for K4S281632F-TC75
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 174 |
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RFQ | ||
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Quest Components | SDRAM, 8M x 16, 54 Pin, Plastic, TSOP | 136 |
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$5.5500 / $9.0000 | Buy Now |
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Quest Components | SDRAM, 8M x 16, 54 Pin, Plastic, TSOP | 95 |
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$3.2500 / $7.5000 | Buy Now |
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Quest Components | SDRAM, 8M x 16, 54 Pin, Plastic, TSOP | 16 |
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$4.4880 / $6.1200 | Buy Now |
Part Details for K4S281632F-TC75
K4S281632F-TC75 CAD Models
K4S281632F-TC75 Part Data Attributes
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K4S281632F-TC75
Samsung Semiconductor
Buy Now
Datasheet
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Compare Parts:
K4S281632F-TC75
Samsung Semiconductor
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | |
Pin Count | 54 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 133 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
Length | 22.22 mm | |
Memory Density | 134217728 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 8388608 words | |
Number of Words Code | 8000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 8MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP54,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.2 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 10.16 mm |
Alternate Parts for K4S281632F-TC75
This table gives cross-reference parts and alternative options found for K4S281632F-TC75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S281632F-TC75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HY57V281620ETP-H | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | SK Hynix Inc | K4S281632F-TC75 vs HY57V281620ETP-H |
MT48LC8M16A2TG-75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | K4S281632F-TC75 vs MT48LC8M16A2TG-75 |
HY57V281620ET-H | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | K4S281632F-TC75 vs HY57V281620ET-H |
HY57V281620FTP-H | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | SK Hynix Inc | K4S281632F-TC75 vs HY57V281620FTP-H |
H57V1262GTR-75C | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | SK Hynix Inc | K4S281632F-TC75 vs H57V1262GTR-75C |
K4S281632E-TC750 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S281632F-TC75 vs K4S281632E-TC750 |
K4S281632D-TC75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S281632F-TC75 vs K4S281632D-TC75 |
MT48LC8M16A2TG-75:G | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | K4S281632F-TC75 vs MT48LC8M16A2TG-75:G |
HY57V281620AT-K | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | K4S281632F-TC75 vs HY57V281620AT-K |
W9812G6JH-75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT,TSOP2-54 | Winbond Electronics Corp | K4S281632F-TC75 vs W9812G6JH-75 |