Part Details for HY57V281620AT-K by SK Hynix Inc
Overview of HY57V281620AT-K by SK Hynix Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Price & Stock for HY57V281620AT-K
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 63 |
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$3.8824 / $8.9600 | Buy Now |
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Quest Components | 50 |
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$5.6000 / $12.0000 | Buy Now |
Part Details for HY57V281620AT-K
HY57V281620AT-K CAD Models
HY57V281620AT-K Part Data Attributes:
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HY57V281620AT-K
SK Hynix Inc
Buy Now
Datasheet
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Compare Parts:
HY57V281620AT-K
SK Hynix Inc
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| Length | 22.22 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.24 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 10.16 mm |
Alternate Parts for HY57V281620AT-K
This table gives cross-reference parts and alternative options found for HY57V281620AT-K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V281620AT-K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4S281632F-TC75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HY57V281620AT-K vs K4S281632F-TC75 |
| HY57V281620FTP-H | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | SK Hynix Inc | HY57V281620AT-K vs HY57V281620FTP-H |
| H57V1262GTR-75C | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | SK Hynix Inc | HY57V281620AT-K vs H57V1262GTR-75C |
| NT5SE8M16DT-75B | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Nanya Technology Corporation | HY57V281620AT-K vs NT5SE8M16DT-75B |
| MT48LC8M16A2P-75:G | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Micron Technology Inc | HY57V281620AT-K vs MT48LC8M16A2P-75:G |
| W9812G6JH-75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT,TSOP2-54 | Winbond Electronics Corp | HY57V281620AT-K vs W9812G6JH-75 |
| W9812G6IH-75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54 | Winbond Electronics Corp | HY57V281620AT-K vs W9812G6IH-75 |
| K4S281632D-TC7C | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HY57V281620AT-K vs K4S281632D-TC7C |
| MT48LC8M16A2TG-75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | HY57V281620AT-K vs MT48LC8M16A2TG-75 |
| K4S281632K-UC750 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 | Samsung Semiconductor | HY57V281620AT-K vs K4S281632K-UC750 |