Part Details for K4S643232E-TE600 by Samsung Semiconductor
Overview of K4S643232E-TE600 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for K4S643232E-TE600
K4S643232E-TE600 CAD Models
K4S643232E-TE600 Part Data Attributes
|
K4S643232E-TE600
Samsung Semiconductor
Buy Now
Datasheet
|
Compare Parts:
K4S643232E-TE600
Samsung Semiconductor
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, | |
Pin Count | 86 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5.5 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-PDSO-G86 | |
Length | 22.22 mm | |
Memory Density | 67108864 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 32 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 86 | |
Number of Words | 2097152 words | |
Number of Words Code | 2000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -25 °C | |
Organization | 2MX32 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Peak Reflow Temperature (Cel) | 240 | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.5 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Width | 10.16 mm |
Alternate Parts for K4S643232E-TE600
This table gives cross-reference parts and alternative options found for K4S643232E-TE600. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643232E-TE600, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MT48LC2M32B2P-6AIT:G | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, TSOP2-86 | Micron Technology Inc | K4S643232E-TE600 vs MT48LC2M32B2P-6AIT:G |
IS42S32200A-6TI | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 | Integrated Silicon Solution Inc | K4S643232E-TE600 vs IS42S32200A-6TI |
MT48LC2M32B2TG-6AAT:G | Synchronous DRAM | Micron Technology Inc | K4S643232E-TE600 vs MT48LC2M32B2TG-6AAT:G |
K4S643232F-TI600 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | K4S643232E-TE600 vs K4S643232F-TI600 |
K4S643232F-TL600 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | K4S643232E-TE600 vs K4S643232F-TL600 |
MT48LC2M32B2P-6AAT:G | Synchronous DRAM, | Micron Technology Inc | K4S643232E-TE600 vs MT48LC2M32B2P-6AAT:G |
MT48LC2M32B2TG-6:G | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 | Micron Technology Inc | K4S643232E-TE600 vs MT48LC2M32B2TG-6:G |
K4S643232E-TC600 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | K4S643232E-TE600 vs K4S643232E-TC600 |
K4S643232E-TC60 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | K4S643232E-TE600 vs K4S643232E-TC60 |
K4S643232E-TP600 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | K4S643232E-TE600 vs K4S643232E-TP600 |