Part Details for MT48LC2M32B2TG-6AAT:G by Micron Technology Inc
Overview of MT48LC2M32B2TG-6AAT:G by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Computing and Data Storage
Part Details for MT48LC2M32B2TG-6AAT:G
MT48LC2M32B2TG-6AAT:G CAD Models
MT48LC2M32B2TG-6AAT:G Part Data Attributes
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MT48LC2M32B2TG-6AAT:G
Micron Technology Inc
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MT48LC2M32B2TG-6AAT:G
Micron Technology Inc
Synchronous DRAM
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Memory IC Type | SYNCHRONOUS DRAM |
Alternate Parts for MT48LC2M32B2TG-6AAT:G
This table gives cross-reference parts and alternative options found for MT48LC2M32B2TG-6AAT:G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48LC2M32B2TG-6AAT:G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MT48LC2M32B2P-6AIT:G | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, TSOP2-86 | Micron Technology Inc | MT48LC2M32B2TG-6AAT:G vs MT48LC2M32B2P-6AIT:G |
IS42S32200A-6TI | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 | Integrated Silicon Solution Inc | MT48LC2M32B2TG-6AAT:G vs IS42S32200A-6TI |
K4S643232F-TI600 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | MT48LC2M32B2TG-6AAT:G vs K4S643232F-TI600 |
K4S643232F-TL600 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | MT48LC2M32B2TG-6AAT:G vs K4S643232F-TL600 |
MT48LC2M32B2P-6AAT:G | Synchronous DRAM, | Micron Technology Inc | MT48LC2M32B2TG-6AAT:G vs MT48LC2M32B2P-6AAT:G |
K4S643232E-TE600 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | MT48LC2M32B2TG-6AAT:G vs K4S643232E-TE600 |
MT48LC2M32B2TG-6:G | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 | Micron Technology Inc | MT48LC2M32B2TG-6AAT:G vs MT48LC2M32B2TG-6:G |
K4S643232E-TC600 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | MT48LC2M32B2TG-6AAT:G vs K4S643232E-TC600 |
K4S643232E-TC60 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | MT48LC2M32B2TG-6AAT:G vs K4S643232E-TC60 |
K4S643232E-TP600 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | MT48LC2M32B2TG-6AAT:G vs K4S643232E-TP600 |