Part Details for K4T51163QG-HDE60 by Samsung Semiconductor
Overview of K4T51163QG-HDE60 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for K4T51163QG-HDE60
K4T51163QG-HDE60 CAD Models
K4T51163QG-HDE60 Part Data Attributes:
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K4T51163QG-HDE60
Samsung Semiconductor
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Datasheet
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K4T51163QG-HDE60
Samsung Semiconductor
DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA84,9X15,32 | |
| Pin Count | 84 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B84 | |
| JESD-609 Code | e1 | |
| Length | 12.5 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 84 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 95 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA84,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.235 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn97.0Ag2.5Cu0.5) | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 7.5 mm |
Alternate Parts for K4T51163QG-HDE60
This table gives cross-reference parts and alternative options found for K4T51163QG-HDE60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4T51163QG-HDE60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4T51163QG-HPE60 | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | K4T51163QG-HDE60 vs K4T51163QG-HPE60 |