Part Details for KSH122-TF by Samsung Semiconductor
Overview of KSH122-TF by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for KSH122-TF
KSH122-TF CAD Models
KSH122-TF Part Data Attributes:
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KSH122-TF
Samsung Semiconductor
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Datasheet
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KSH122-TF
Samsung Semiconductor
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Collector Current-Max (IC) | 8 A | |
Collector-Base Capacitance-Max | 200 pF | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 100 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 20 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON | |
VCEsat-Max | 4 V |
Alternate Parts for KSH122-TF
This table gives cross-reference parts and alternative options found for KSH122-TF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KSH122-TF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MJD122-TP-HF | Power Bipolar Transistor, | Micro Commercial Components | KSH122-TF vs MJD122-TP-HF |
MJD122-TP | Power Bipolar Transistor, Plastic/Epoxy, 2 Pin, DPAK-3 | Micro Commercial Components | KSH122-TF vs MJD122-TP |
KSH122TM | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin, DPAK-3/2 | Fairchild Semiconductor Corporation | KSH122-TF vs KSH122TM |
MJD122 | Power Bipolar Transistor | WEITRON INTERNATIONAL CO., LTD. | KSH122-TF vs MJD122 |
MJD122 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | Fairchild Semiconductor Corporation | KSH122-TF vs MJD122 |
MJD122G | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE | onsemi | KSH122-TF vs MJD122G |
CJD122BK | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Central Semiconductor Corp | KSH122-TF vs CJD122BK |
KSH122 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | Samsung Semiconductor | KSH122-TF vs KSH122 |
MJD122TF | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | Fairchild Semiconductor Corporation | KSH122-TF vs MJD122TF |
KSH122TF_NL | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | KSH122-TF vs KSH122TF_NL |