Datasheets
M12L64322A-6BIG by: Elite Semiconductor Memory Technology Inc

Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, FBGA-90

Part Details for M12L64322A-6BIG by Elite Semiconductor Memory Technology Inc

Overview of M12L64322A-6BIG by Elite Semiconductor Memory Technology Inc

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for M12L64322A-6BIG

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M12L64322A-6BIG Part Data Attributes

M12L64322A-6BIG Elite Semiconductor Memory Technology Inc
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M12L64322A-6BIG Elite Semiconductor Memory Technology Inc Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, FBGA-90
Part Life Cycle Code Obsolete
Ihs Manufacturer ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Part Package Code BGA
Package Description LFBGA,
Pin Count 90
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.5 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B90
Length 13 mm
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 2MX32
Package Body Material PLASTIC/EPOXY
Package Code LFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for M12L64322A-6BIG

This table gives cross-reference parts and alternative options found for M12L64322A-6BIG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M12L64322A-6BIG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT48LC2M32B2B5-6AT:G Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Micron Technology Inc M12L64322A-6BIG vs MT48LC2M32B2B5-6AT:G
IS42S32200E-7B 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, 0.80 MM PITCH, TFBGA-90 ABLIC Inc. M12L64322A-6BIG vs IS42S32200E-7B
IS45S32200E-6BLA1 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, LEAD FREE, 0.80 MM PITCH, TFBGA-90 ABLIC Inc. M12L64322A-6BIG vs IS45S32200E-6BLA1
IS42S32200E-6BI 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, 0.80 MM PITCH, TFBGA-90 ABLIC Inc. M12L64322A-6BIG vs IS42S32200E-6BI
IS42S32200-7BLI Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, BGA-90 Integrated Silicon Solution Inc M12L64322A-6BIG vs IS42S32200-7BLI
MT48LC2M32B2B5-7AT:G Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Micron Technology Inc M12L64322A-6BIG vs MT48LC2M32B2B5-7AT:G
IS42SM32200G-6BLI Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc M12L64322A-6BIG vs IS42SM32200G-6BLI
IS45S32200E-75EBLA1 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, LEAD FREE, 0.80 MM PITCH, TFBGA-90 ABLIC Inc. M12L64322A-6BIG vs IS45S32200E-75EBLA1
IS42S32200E-7BLI 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, LEAD FREE, 0.80 MM PITCH, TFBGA-90 ABLIC Inc. M12L64322A-6BIG vs IS42S32200E-7BLI
M12L64322A-6BG Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, BGA-90 Elite Semiconductor Memory Technology Inc M12L64322A-6BIG vs M12L64322A-6BG
Part Number Description Manufacturer Compare
K4S643233H-FN1H0 Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor M12L64322A-6BIG vs K4S643233H-FN1H0
IS42S32200E-7BL 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, LEAD FREE, 0.80 MM PITCH, TFBGA-90 ABLIC Inc. M12L64322A-6BIG vs IS42S32200E-7BL
IS43LR32200B-6BLI DDR DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc M12L64322A-6BIG vs IS43LR32200B-6BLI
K4S64323LH-FF600 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor M12L64322A-6BIG vs K4S64323LH-FF600
K4S643233H-FN1L0 Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor M12L64322A-6BIG vs K4S643233H-FN1L0
IS42S32200E-6BL Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc M12L64322A-6BIG vs IS42S32200E-6BL
K4S643233H-FF600 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor M12L64322A-6BIG vs K4S643233H-FF600
M2L64S50DWG-7 Synchronous DRAM, 2MX32, 8ns, CMOS, PBGA90, BGA-90 Mitsubishi Electric M12L64322A-6BIG vs M2L64S50DWG-7
IS42VS32200E-10BLI Synchronous DRAM, 2MX32, 8ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, FBGA-90 Integrated Silicon Solution Inc M12L64322A-6BIG vs IS42VS32200E-10BLI
MT48LC2M32B2B5-6A:J Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc M12L64322A-6BIG vs MT48LC2M32B2B5-6A:J

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