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M29F080D70N6E by:
STMicroelectronics

1MX8 FLASH 5V PROM, 70ns, PDSO40, 10 X 20 MM, LEAD FREE, PLASTIC, TSOP-40

Part Details for M29F080D70N6E by STMicroelectronics

Results Overview of M29F080D70N6E by STMicroelectronics

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M29F080D70N6E Information

M29F080D70N6E by STMicroelectronics is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for M29F080D70N6E

Part # Distributor Description Stock Price Buy
DISTI # 93K7352
Newark Flash, 8Mbit, 70Ns, Tsop-40, Flash Memory Type:Parallel Nor, Memory Configuration:1M X 8Bit, Interfaces:Parallel, Ic Case/Package:Tsop, No. Of Pins:40Pins, Clock Frequency Max:-, Access Time:70Ns, Supply Voltage Min:4.5V, Msl:- Rohs Compliant: Yes |Stmicroelectronics M29F080D70N6E RoHS: Compliant Min Qty: 720 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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US Tariff Estimator: M29F080D70N6E by STMicroelectronics

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Part Details for M29F080D70N6E

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M29F080D70N6E Part Data Attributes

M29F080D70N6E STMicroelectronics
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M29F080D70N6E STMicroelectronics 1MX8 FLASH 5V PROM, 70ns, PDSO40, 10 X 20 MM, LEAD FREE, PLASTIC, TSOP-40
Rohs Code Yes
Part Life Cycle Code Transferred
Part Package Code TSOP
Package Description Tsop1, Tssop40,.8,20
Pin Count 40
Reach Compliance Code Compliant
ECCN Code EAR99
HTS Code 8542.32.00.51
Access Time-Max 70 Ns
Command User Interface Yes
Common Flash Interface Yes
Data Polling Yes
JESD-30 Code R-PDSO-G40
JESD-609 Code e3/e6
Length 18.4 Mm
Memory Density 8388608 Bit
Memory IC Type Flash
Memory Width 8
Number of Functions 1
Number of Sectors/Size 16
Number of Terminals 40
Number of Words 1048576 Words
Number of Words Code 1000000
Operating Mode Asynchronous
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 1mx8
Package Body Material Plastic/Epoxy
Package Code TSOP1
Package Equivalence Code TSSOP40,.8,20
Package Shape Rectangular
Package Style Small Outline, Thin Profile
Parallel/Serial Parallel
Peak Reflow Temperature (Cel) 260
Programming Voltage 5 V
Qualification Status Not Qualified
Ready/Busy Yes
Seated Height-Max 1.2 Mm
Sector Size 64k
Standby Current-Max 0.00015 A
Supply Current-Max 0.02 Ma
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount Yes
Technology Cmos
Temperature Grade Industrial
Terminal Finish Tin/Tin Bismuth
Terminal Form Gull Wing
Terminal Pitch 0.5 Mm
Terminal Position Dual
Time@Peak Reflow Temperature-Max (s) 40
Toggle Bit Yes
Type Nor Type
Width 10 Mm

Alternate Parts for M29F080D70N6E

This table gives cross-reference parts and alternative options found for M29F080D70N6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M29F080D70N6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
M29F080A70N1 Numonyx Memory Solutions Check for Price Flash, 1MX8, 70ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40 M29F080D70N6E vs M29F080A70N1
M29F080A70N1TR Numonyx Memory Solutions Check for Price Flash, 1MX8, 70ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40 M29F080D70N6E vs M29F080A70N1TR
HY29F080T-70 SK Hynix Inc Check for Price Flash, 1MX8, 70ns, PDSO40, TSOP-40 M29F080D70N6E vs HY29F080T-70
M29F080D90N6T STMicroelectronics Check for Price 1MX8 FLASH 5V PROM, 70ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40 M29F080D70N6E vs M29F080D90N6T
M29F080A70N1TR STMicroelectronics Check for Price 1MX8 FLASH 5V PROM, 70ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40 M29F080D70N6E vs M29F080A70N1TR
M29F080D70N6 STMicroelectronics Check for Price 1MX8 FLASH 5V PROM, 70ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40 M29F080D70N6E vs M29F080D70N6
HY29F080T-70I SK Hynix Inc Check for Price Flash, 1MX8, 70ns, PDSO40, TSOP-40 M29F080D70N6E vs HY29F080T-70I
HY29F080T-70E SK Hynix Inc Check for Price Flash, 1MX8, 70ns, PDSO40 M29F080D70N6E vs HY29F080T-70E
Part Number Manufacturer Composite Price Description Compare
M29F080D90N6 STMicroelectronics Check for Price 1MX8 FLASH 5V PROM, 70ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40 M29F080D70N6E vs M29F080D90N6
AM29F080B-70EC AMD Check for Price Flash, 1MX8, 70ns, PDSO40, MO-142CD, TSOP-40 M29F080D70N6E vs AM29F080B-70EC
M29R008D-100N5TR STMicroelectronics Check for Price 1MX8 FLASH 3V PROM, 100ns, PDSO40, 10 X 20 MM, TSOP-40 M29F080D70N6E vs M29R008D-100N5TR
AM29F080B-120EI AMD Check for Price Flash, 1MX8, 120ns, PDSO40, MO-142CD, TSOP-40 M29F080D70N6E vs AM29F080B-120EI
M29W008ET70N6E STMicroelectronics Check for Price 1MX8 FLASH 3V PROM, 70ns, PDSO40, 10 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-40 M29F080D70N6E vs M29W008ET70N6E
MBM29LV008BA-90PTN FUJITSU Limited Check for Price Flash, 1MX8, 90ns, PDSO40, PLASTIC, TSOP1-40 M29F080D70N6E vs MBM29LV008BA-90PTN
M29F080A70N6T STMicroelectronics Check for Price 1MX8 FLASH 5V PROM, 70ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40 M29F080D70N6E vs M29F080A70N6T
M29R008B-100N5 STMicroelectronics Check for Price 1MX8 FLASH 3V PROM, 100ns, PDSO40, 10 X 20 MM, TSOP-40 M29F080D70N6E vs M29R008B-100N5
TMS28F008AVB120CDCDL Texas Instruments Check for Price 1MX8 FLASH 3V PROM, 120ns, PDSO40, TSOP-40 M29F080D70N6E vs TMS28F008AVB120CDCDL
TMS28F008AVB100BDCDE Texas Instruments Check for Price 1MX8 FLASH 3V PROM, 100ns, PDSO40, TSOP-40 M29F080D70N6E vs TMS28F008AVB100BDCDE
equivalents icon

M29F080D70N6E Related Parts

M29F080D70N6E Frequently Asked Questions (FAQ)

  • The M29F080D70N6E can operate from -40°C to +125°C, with a maximum junction temperature of 150°C.

  • The HOLD# signal should be asserted low to pause the current operation, and de-asserted high to resume the operation. Note that HOLD# should not be asserted during a write operation, as it may cause data corruption.

  • The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal. This ensures proper device initialization and prevents latch-up conditions.

  • The M29F080D70N6E is an 8Mbit flash memory device, organized as 512K x 16 bits. The device density and organization can be determined by reading the device ID and configuration registers.

  • The WEL bit is used to enable or disable write operations to the device. When WEL is set to 1, write operations are enabled, and when WEL is set to 0, write operations are disabled.

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