Part Details for MB81F161622B-60FN by FUJITSU Limited
Overview of MB81F161622B-60FN by FUJITSU Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for MB81F161622B-60FN
MB81F161622B-60FN CAD Models
MB81F161622B-60FN Part Data Attributes
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MB81F161622B-60FN
FUJITSU Limited
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Datasheet
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MB81F161622B-60FN
FUJITSU Limited
Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJITSU LTD | |
| Package Description | TSOP2, TSOP50,.46,32 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 5.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 167 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G50 | |
| JESD-609 Code | e0 | |
| Length | 20.95 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP50,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.0004 A | |
| Supply Current-Max | 0.2 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3.15 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for MB81F161622B-60FN
This table gives cross-reference parts and alternative options found for MB81F161622B-60FN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MB81F161622B-60FN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| W981616CH-5 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 | Winbond Electronics Corp | MB81F161622B-60FN vs W981616CH-5 |
| MB81F161622B-60FN | 1MX16 SYNCHRONOUS DRAM, 5.5ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Semiconductor Limited | MB81F161622B-60FN vs MB81F161622B-60FN |
| K4S161622D-TE60 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50 | Samsung Semiconductor | MB81F161622B-60FN vs K4S161622D-TE60 |
| VG3617161ET-6 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Vanguard International Semiconductor Corporation | MB81F161622B-60FN vs VG3617161ET-6 |
| V54C317162VCT-6 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Mosel Vitelic Corporation | MB81F161622B-60FN vs V54C317162VCT-6 |
| K4S161622H-TC700 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | Samsung Semiconductor | MB81F161622B-60FN vs K4S161622H-TC700 |
| V54C316162VCT-6 | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Mosel Vitelic Corporation | MB81F161622B-60FN vs V54C316162VCT-6 |
| MB81F161622C-60FN | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Semiconductor Limited | MB81F161622B-60FN vs MB81F161622C-60FN |
| V54C316162VCT6 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Mosel Vitelic Corporation | MB81F161622B-60FN vs V54C316162VCT6 |
| IS45S16100E-7TLA2 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50 | Integrated Silicon Solution Inc | MB81F161622B-60FN vs IS45S16100E-7TLA2 |