Datasheets
V54C317162VCT-6 by: Mosel Vitelic Corporation

Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

Part Details for V54C317162VCT-6 by Mosel Vitelic Corporation

Overview of V54C317162VCT-6 by Mosel Vitelic Corporation

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Applications Consumer Electronics Computing and Data Storage

Part Details for V54C317162VCT-6

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V54C317162VCT-6 Part Data Attributes

V54C317162VCT-6 Mosel Vitelic Corporation
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V54C317162VCT-6 Mosel Vitelic Corporation Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
Part Life Cycle Code Obsolete
Ihs Manufacturer MOSEL-VITELIC
Part Package Code TSOP2
Package Description TSOP2,
Pin Count 50
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode DUAL BANK PAGE BURST
Access Time-Max 5.5 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G50
Length 20.95 mm
Memory Density 16777216 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for V54C317162VCT-6

This table gives cross-reference parts and alternative options found for V54C317162VCT-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V54C317162VCT-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
V54C316162VCT-6 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Mosel Vitelic Corporation V54C317162VCT-6 vs V54C316162VCT-6
AS4C1M16S-6TE Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 Alliance Memory Inc V54C317162VCT-6 vs AS4C1M16S-6TE
KM416S1021CT-G7 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 Samsung Semiconductor V54C317162VCT-6 vs KM416S1021CT-G7
NT56V1616A0T-7 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Nanya Technology Corporation V54C317162VCT-6 vs NT56V1616A0T-7
W981616CH-5 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Winbond Electronics Corp V54C317162VCT-6 vs W981616CH-5
MT48LC1M16A1TG-6STR Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Micron Technology Inc V54C317162VCT-6 vs MT48LC1M16A1TG-6STR
K4S161622D-TL60 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor V54C317162VCT-6 vs K4S161622D-TL60
IS42S16100C1-7TI-TR Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Integrated Silicon Solution Inc V54C317162VCT-6 vs IS42S16100C1-7TI-TR
W981616AH-7 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Winbond Electronics Corp V54C317162VCT-6 vs W981616AH-7
W981616CH-6 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Winbond Electronics Corp V54C317162VCT-6 vs W981616CH-6
Part Number Description Manufacturer Compare
VG3617161ET-8 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation V54C317162VCT-6 vs VG3617161ET-8
IS42S16100B-6T Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Integrated Silicon Solution Inc V54C317162VCT-6 vs IS42S16100B-6T
K4S161622D-TI10 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50 Samsung Semiconductor V54C317162VCT-6 vs K4S161622D-TI10
HY57V161610DLTC-10S Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc V54C317162VCT-6 vs HY57V161610DLTC-10S
UPD4516161AG5-A80-9NF Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Elpida Memory Inc V54C317162VCT-6 vs UPD4516161AG5-A80-9NF
K4S161622E-TI55 Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50 Samsung Semiconductor V54C317162VCT-6 vs K4S161622E-TI55
HY57V161610DTC-15 Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc V54C317162VCT-6 vs HY57V161610DTC-15
UPD4516161AG5-A12-9NF Synchronous DRAM, 1MX16, 8ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics Group V54C317162VCT-6 vs UPD4516161AG5-A12-9NF
IS42VS16100D-75T Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, PLASTIC, TSOP2-50 Integrated Silicon Solution Inc V54C317162VCT-6 vs IS42VS16100D-75T
HYB39S16160AT-8 Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 INCH, TSSOP2-50 Siemens V54C317162VCT-6 vs HYB39S16160AT-8

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