Datasheets
MRF141G by:

RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4

Part Details for MRF141G by Advanced Semiconductor Inc

Overview of MRF141G by Advanced Semiconductor Inc

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Applications Consumer Electronics Audio and Video Systems Entertainment and Gaming

Price & Stock for MRF141G

Part # Distributor Description Stock Price Buy
DISTI # 974-MRF141G
Mouser Electronics RF MOSFET Transistors RF Transistor RoHS: Compliant 0
  • 1 $147.9500
  • 10 $136.9600
  • 25 $131.9800
  • 50 $127.9700
$127.9700 / $147.9500 Order Now

Part Details for MRF141G

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MRF141G Part Data Attributes

MRF141G Advanced Semiconductor Inc
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MRF141G Advanced Semiconductor Inc RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description FLANGE MOUNT, R-CDFM-F4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Advanced Semiconductor, Inc.
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 32 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 500 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for MRF141G

This table gives cross-reference parts and alternative options found for MRF141G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF141G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MRF141G 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN Motorola Mobility LLC MRF141G vs MRF141G
Part Number Description Manufacturer Compare
933978490112 TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors MRF141G vs 933978490112
MRF141G 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN Motorola Mobility LLC MRF141G vs MRF141G
MRF175GV 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN TE Connectivity MRF141G vs MRF175GV
MRF175GV RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN MACOM MRF141G vs MRF175GV
BLF348 TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-262A1, 4 PIN, FET RF Power NXP Semiconductors MRF141G vs BLF348
BLF248,112 BLF248 NXP Semiconductors MRF141G vs BLF248,112
VFT300-28 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.400 INCH, FM-4 Advanced Semiconductor Inc MRF141G vs VFT300-28
MRF175GV 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC MRF141G vs MRF175GV
BLF248 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-262A1, 4 PIN NXP Semiconductors MRF141G vs BLF248
BLF248 RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4 Advanced Semiconductor Inc MRF141G vs BLF248

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