Datasheets
MRF175GV by:

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN

Part Details for MRF175GV by TE Connectivity

Overview of MRF175GV by TE Connectivity

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Part Details for MRF175GV

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MRF175GV Part Data Attributes

MRF175GV TE Connectivity
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MRF175GV TE Connectivity 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer TE CONNECTIVITY LTD
Pin Count 4
Manufacturer Package Code CASE 375-04
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 26 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for MRF175GV

This table gives cross-reference parts and alternative options found for MRF175GV. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF175GV, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MRF175GV RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN MACOM MRF175GV vs MRF175GV
MRF175GV RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Advanced Semiconductor Inc MRF175GV vs MRF175GV
Part Number Description Manufacturer Compare
MRF175GV RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Advanced Semiconductor Inc MRF175GV vs MRF175GV
MRF141G RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4 Advanced Semiconductor Inc MRF175GV vs MRF141G
VFT300-28 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.400 INCH, FM-4 Advanced Semiconductor Inc MRF175GV vs VFT300-28
BLF248 RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4 Advanced Semiconductor Inc MRF175GV vs BLF248
934006630112 TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors MRF175GV vs 934006630112
BLF368 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, FM-4 NXP Semiconductors MRF175GV vs BLF368
MRF175GV RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN MACOM MRF175GV vs MRF175GV
MRF141G 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN TE Connectivity MRF175GV vs MRF141G
BLF348 TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-262A1, 4 PIN, FET RF Power NXP Semiconductors MRF175GV vs BLF348

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