Part Details for MT48LC1M16A1TG-6S by Micron Technology Inc
Overview of MT48LC1M16A1TG-6S by Micron Technology Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MT48LC1M16A1TG-6S
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 100 |
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RFQ | ||
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Bristol Electronics | 7 |
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RFQ | ||
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Quest Components | SDRAM, 1M x 16, 50 Pin, Plastic, TSOP | 124 |
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$10.4125 / $13.3875 | Buy Now |
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Quest Components | SDRAM, 1M x 16, 50 Pin, Plastic, TSOP | 3 |
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$18.1293 / $19.4243 | Buy Now |
Part Details for MT48LC1M16A1TG-6S
MT48LC1M16A1TG-6S CAD Models
MT48LC1M16A1TG-6S Part Data Attributes
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MT48LC1M16A1TG-6S
Micron Technology Inc
Buy Now
Datasheet
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Compare Parts:
MT48LC1M16A1TG-6S
Micron Technology Inc
Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Part Package Code | TSOP | |
Package Description | 0.400 INCH, PLASTIC, TSOP-50 | |
Pin Count | 50 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | DUAL BANK PAGE BURST | |
Access Time-Max | 5.5 ns | |
Clock Frequency-Max (fCLK) | 166 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G50 | |
JESD-609 Code | e0 | |
Length | 20.95 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 50 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 1MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP50,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.145 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for MT48LC1M16A1TG-6S
This table gives cross-reference parts and alternative options found for MT48LC1M16A1TG-6S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48LC1M16A1TG-6S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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V54C316162VCT-6 | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Mosel Vitelic Corporation | MT48LC1M16A1TG-6S vs V54C316162VCT-6 |
AS4C1M16S-6TE | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 | Alliance Memory Inc | MT48LC1M16A1TG-6S vs AS4C1M16S-6TE |
KM416S1021CT-G7 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | MT48LC1M16A1TG-6S vs KM416S1021CT-G7 |
NT56V1616A0T-7 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Nanya Technology Corporation | MT48LC1M16A1TG-6S vs NT56V1616A0T-7 |
W981616CH-5 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 | Winbond Electronics Corp | MT48LC1M16A1TG-6S vs W981616CH-5 |
MT48LC1M16A1TG-6STR | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 | Micron Technology Inc | MT48LC1M16A1TG-6S vs MT48LC1M16A1TG-6STR |
K4S161622D-TL60 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | Samsung Semiconductor | MT48LC1M16A1TG-6S vs K4S161622D-TL60 |
IS42S16100C1-7TI-TR | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Integrated Silicon Solution Inc | MT48LC1M16A1TG-6S vs IS42S16100C1-7TI-TR |
W981616AH-7 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 | Winbond Electronics Corp | MT48LC1M16A1TG-6S vs W981616AH-7 |
W981616CH-6 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 | Winbond Electronics Corp | MT48LC1M16A1TG-6S vs W981616CH-6 |