Part Details for NAND256W3A2BN6F by STMicroelectronics
Results Overview of NAND256W3A2BN6F by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Computing and Data Storage
Energy and Power Systems
NAND256W3A2BN6F Information
NAND256W3A2BN6F by STMicroelectronics is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for NAND256W3A2BN6F
| Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | IC FLASH 256MBIT 50NS 48TSOP / SLC NAND Flash Parallel 3V/3.3V 256M-bit 32M x 8 12us 48-Pin TSOP T/R | 2300 |
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$7.1990 / $10.7985 | Buy Now |
US Tariff Estimator: NAND256W3A2BN6F by STMicroelectronics
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for NAND256W3A2BN6F
NAND256W3A2BN6F Part Data Attributes
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NAND256W3A2BN6F
STMicroelectronics
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Datasheet
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Compare Parts:
NAND256W3A2BN6F
STMicroelectronics
32MX8 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Part Package Code | TSOP | |
| Package Description | Tsop1, Tssop48,.8,20 | |
| Pin Count | 48 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Access Time-Max | 12000 Ns | |
| Command User Interface | Yes | |
| Data Polling | No | |
| JESD-30 Code | R-PDSO-G48 | |
| JESD-609 Code | e3/e6 | |
| Length | 18.4 Mm | |
| Memory Density | 268435456 Bit | |
| Memory IC Type | Flash | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 2k | |
| Number of Terminals | 48 | |
| Number of Words | 33554432 Words | |
| Number of Words Code | 32000000 | |
| Operating Mode | Asynchronous | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32mx8 | |
| Package Body Material | Plastic/Epoxy | |
| Package Code | TSOP1 | |
| Package Equivalence Code | TSSOP48,.8,20 | |
| Package Shape | Rectangular | |
| Package Style | Small Outline, Thin Profile | |
| Page Size | 512 Words | |
| Parallel/Serial | Parallel | |
| Peak Reflow Temperature (Cel) | 260 | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | Yes | |
| Seated Height-Max | 1.2 Mm | |
| Sector Size | 16k | |
| Standby Current-Max | 0.00005 A | |
| Supply Current-Max | 0.02 Ma | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | Yes | |
| Technology | Cmos | |
| Temperature Grade | Industrial | |
| Terminal Finish | Tin/Tin Bismuth | |
| Terminal Form | Gull Wing | |
| Terminal Pitch | 0.5 Mm | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Toggle Bit | No | |
| Type | Slc Nand Type | |
| Width | 12 Mm |
Alternate Parts for NAND256W3A2BN6F
This table gives cross-reference parts and alternative options found for NAND256W3A2BN6F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NAND256W3A2BN6F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NAND256W3A0BN6E | Numonyx Memory Solutions | Check for Price | Flash, 32MX8, CMOS, PDSO48 | NAND256W3A2BN6F vs NAND256W3A0BN6E |
| NAND256W3A0AN6F | Numonyx Memory Solutions | Check for Price | Flash, 32MX8, CMOS, PDSO48 | NAND256W3A2BN6F vs NAND256W3A0AN6F |
| NAND256W3A2CN6F | Numonyx Memory Solutions | Check for Price | Flash, 32MX8, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | NAND256W3A2BN6F vs NAND256W3A2CN6F |
| NAND256W3A2AN6F | STMicroelectronics | Check for Price | 32MX8 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | NAND256W3A2BN6F vs NAND256W3A2AN6F |
| NAND256W3A2AN6E | Numonyx Memory Solutions | Check for Price | Flash, 32MX8, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | NAND256W3A2BN6F vs NAND256W3A2AN6E |
| NAND256W3A0CN6E | Micron Technology Inc | Check for Price | Flash, 32MX8, 35ns, PDSO48, TSOP-48 | NAND256W3A2BN6F vs NAND256W3A0CN6E |
| NAND256W3A2BN6E | Numonyx Memory Solutions | Check for Price | Flash, 32MX8, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | NAND256W3A2BN6F vs NAND256W3A2BN6E |
| NAND256W3A2BN6E | STMicroelectronics | Check for Price | 32MX8 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | NAND256W3A2BN6F vs NAND256W3A2BN6E |
| NAND256W3A0BN6E | Micron Technology Inc | Check for Price | Flash, 32MX8, 35ns, PDSO48, TSOP-48 | NAND256W3A2BN6F vs NAND256W3A0BN6E |
| NAND256W3A0AN6T | STMicroelectronics | Check for Price | Flash, 32MX8, CMOS, PDSO48 | NAND256W3A2BN6F vs NAND256W3A0AN6T |
NAND256W3A2BN6F Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the NAND256W3A2BN6F is -40°C to 85°C.
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The NAND256W3A2BN6F has an internal power-on reset circuit. However, it's recommended to add an external reset circuit to ensure a clean power-up sequence.
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The maximum number of program/erase cycles for the NAND256W3A2BN6F is 3,000 to 5,000 cycles, depending on the operating conditions.
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Wear leveling can be implemented using a combination of hardware and software techniques, such as dynamic wear leveling, static wear leveling, and bad block management.
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Bad blocks can be handled using a bad block table, which keeps track of defective blocks and redirects data to spare blocks. The table should be updated regularly to ensure data integrity.