Datasheets
NE72218-59 by:

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4

Part Details for NE72218-59 by NEC Compound Semiconductor Devices Ltd

Overview of NE72218-59 by NEC Compound Semiconductor Devices Ltd

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Applications Consumer Electronics

Part Details for NE72218-59

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NE72218-59 Part Data Attributes

NE72218-59 NEC Compound Semiconductor Devices Ltd
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NE72218-59 NEC Compound Semiconductor Devices Ltd RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4
Part Life Cycle Code Obsolete
Ihs Manufacturer NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Package Description PLASTIC, SUPERMINI-4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 5 V
FET Technology METAL SEMICONDUCTOR
Highest Frequency Band X BAND
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for NE72218-59

This table gives cross-reference parts and alternative options found for NE72218-59. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE72218-59, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FHC40LG RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN FUJITSU Limited NE72218-59 vs FHC40LG
NE425S01-T1B RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET NEC Electronics Group NE72218-59 vs NE425S01-T1B
FHX35LG RF Small Signal Field-Effect Transistor, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 FUJITSU Semiconductor Limited NE72218-59 vs FHX35LG
FHX14LG RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN FUJITSU Limited NE72218-59 vs FHX14LG
NE76118-M RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4 NEC Electronics Group NE72218-59 vs NE76118-M
CFY30 RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET Siemens NE72218-59 vs CFY30
NE76038 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET California Eastern Laboratories (CEL) NE72218-59 vs NE76038
CFH120-08 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, High Electron Mobility FET, PLASTIC, MW-4, 4 PIN TriQuint Semiconductor NE72218-59 vs CFH120-08
NE76118-T2K RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4 NEC Electronics Group NE72218-59 vs NE76118-T2K
NE42484A RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, NEC Electronics America Inc NE72218-59 vs NE42484A

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