Part Details for NT5SE8M16DT-75B by Nanya Technology Corporation
Overview of NT5SE8M16DT-75B by Nanya Technology Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for NT5SE8M16DT-75B
NT5SE8M16DT-75B CAD Models
NT5SE8M16DT-75B Part Data Attributes
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NT5SE8M16DT-75B
Nanya Technology Corporation
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Datasheet
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NT5SE8M16DT-75B
Nanya Technology Corporation
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.18 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for NT5SE8M16DT-75B
This table gives cross-reference parts and alternative options found for NT5SE8M16DT-75B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5SE8M16DT-75B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HY57V281620ETP-H | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | SK Hynix Inc | NT5SE8M16DT-75B vs HY57V281620ETP-H |
| MT48LC8M16A2TG-75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | NT5SE8M16DT-75B vs MT48LC8M16A2TG-75 |
| HY57V281620ET-H | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | NT5SE8M16DT-75B vs HY57V281620ET-H |
| HY57V281620FTP-H | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | SK Hynix Inc | NT5SE8M16DT-75B vs HY57V281620FTP-H |
| H57V1262GTR-75C | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | SK Hynix Inc | NT5SE8M16DT-75B vs H57V1262GTR-75C |
| K4S281632E-TC750 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | NT5SE8M16DT-75B vs K4S281632E-TC750 |
| K4S281632D-TC75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | NT5SE8M16DT-75B vs K4S281632D-TC75 |
| MT48LC8M16A2TG-75:G | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | NT5SE8M16DT-75B vs MT48LC8M16A2TG-75:G |
| HY57V281620AT-K | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | NT5SE8M16DT-75B vs HY57V281620AT-K |
| W9812G6JH-75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT,TSOP2-54 | Winbond Electronics Corp | NT5SE8M16DT-75B vs W9812G6JH-75 |