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Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L, 450-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
91AH8487
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Newark | Sic Mosfet, N-Ch, 20V, 31A, To-247, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:31A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:20V, Power Dissipation:178W Rohs Compliant: Yes |Onsemi NTHL080N120SC1A Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 900 |
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$6.9700 / $7.3200 | Buy Now |
DISTI #
82AH7656
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Newark | Mosfet, N-Ch, 1.2Kv, 31A, To-247 Rohs Compliant: Yes |Onsemi NTHL080N120SC1A Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$10.4100 / $15.0800 | Buy Now |
DISTI #
5556-NTHL080N120SC1A-ND
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DigiKey | SICFET N-CH 1200V 31A TO247-3 Min Qty: 1 Lead time: 18 Weeks Container: Tube |
111 In Stock |
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$6.9185 / $10.9200 | Buy Now |
DISTI #
NTHL080N120SC1A
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Avnet Americas | Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 110 Milliohms, TO-247, 3 Pins - Rail/Tube (Alt: NTHL080N120SC1A) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube | 600 |
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$6.3865 / $7.6226 | Buy Now |
DISTI #
91AH8487
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Avnet Americas | Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 110 Milliohms, TO-247, 3 Pins - Bulk (Alt: 91AH8487) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 3 Days Container: Bulk | 900 Partner Stock |
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$8.2000 / $10.6100 | Buy Now |
DISTI #
863-NTHL080N120SC1A
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Mouser Electronics | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L RoHS: Compliant | 1555 |
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$6.6800 / $10.9200 | Buy Now |
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Future Electronics | 1200 V 31A 178W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 2940Tube |
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$6.6700 / $6.8300 | Buy Now |
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Future Electronics | 1200 V 31A 178W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 70Tube |
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$6.6700 / $7.0000 | Buy Now |
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Future Electronics | 1200 V 31A 178W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Container: Tube | 0Tube |
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$6.6700 / $6.8300 | Buy Now |
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Future Electronics | 1200 V 31A 178W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 0Tube |
|
$6.6700 / $6.9700 | Buy Now |
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NTHL080N120SC1A
onsemi
Buy Now
Datasheet
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Compare Parts:
NTHL080N120SC1A
onsemi
Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L, 450-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 340CX | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2020-03-09 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 171 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 31 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 6.5 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 178 W | |
Pulsed Drain Current-Max (IDM) | 132 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |
This table gives cross-reference parts and alternative options found for NTHL080N120SC1A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTHL080N120SC1A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NVHL080N120SC1 | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3, 450-TUBE, Automotive Qualified | onsemi | NTHL080N120SC1A vs NVHL080N120SC1 |