Datasheets
NTHL080N120SC1A by:

Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L, 450-TUBE

Part Details for NTHL080N120SC1A by onsemi

Overview of NTHL080N120SC1A by onsemi

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Price & Stock for NTHL080N120SC1A

Part # Distributor Description Stock Price Buy
DISTI # 91AH8487
Newark Sic Mosfet, N-Ch, 20V, 31A, To-247, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:31A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:20V, Power Dissipation:178W Rohs Compliant: Yes |Onsemi NTHL080N120SC1A Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 900
  • 1 $7.3200
  • 10 $7.3200
  • 25 $7.3200
  • 50 $7.3200
  • 100 $7.3200
  • 250 $7.2000
  • 900 $6.9700
$6.9700 / $7.3200 Buy Now
DISTI # 82AH7656
Newark Mosfet, N-Ch, 1.2Kv, 31A, To-247 Rohs Compliant: Yes |Onsemi NTHL080N120SC1A Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $15.0800
  • 10 $13.8700
  • 25 $13.2900
  • 50 $12.5000
  • 100 $11.7100
  • 250 $11.0600
  • 500 $10.4100
$10.4100 / $15.0800 Buy Now
DISTI # 5556-NTHL080N120SC1A-ND
DigiKey SICFET N-CH 1200V 31A TO247-3 Min Qty: 1 Lead time: 18 Weeks Container: Tube 111
In Stock
  • 1 $10.9200
  • 30 $8.8433
  • 120 $8.3231
  • 510 $7.5428
  • 1,020 $6.9185
$6.9185 / $10.9200 Buy Now
DISTI # NTHL080N120SC1A
Avnet Americas Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 110 Milliohms, TO-247, 3 Pins - Rail/Tube (Alt: NTHL080N120SC1A) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube 600
  • 30 $7.6226
  • 40 $7.4166
  • 70 $7.2106
  • 150 $7.0045
  • 300 $6.7985
  • 1,500 $6.5925
  • 3,000 $6.3865
$6.3865 / $7.6226 Buy Now
DISTI # 91AH8487
Avnet Americas Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 110 Milliohms, TO-247, 3 Pins - Bulk (Alt: 91AH8487) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 3 Days Container: Bulk 900 Partner Stock
  • 1 $10.6100
  • 10 $9.9200
  • 25 $9.6300
  • 50 $8.6900
  • 100 $8.2000
$8.2000 / $10.6100 Buy Now
DISTI # 863-NTHL080N120SC1A
Mouser Electronics MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L RoHS: Compliant 1555
  • 1 $10.9200
  • 10 $9.6200
  • 25 $7.8100
  • 50 $7.7600
  • 100 $7.5000
  • 250 $6.9000
  • 450 $6.7700
  • 900 $6.6800
$6.6800 / $10.9200 Buy Now
Future Electronics 1200 V 31A 178W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 2940
Tube
  • 30 $6.8300
  • 90 $6.7800
  • 150 $6.7600
  • 300 $6.7200
  • 600 $6.6700
$6.6700 / $6.8300 Buy Now
Future Electronics 1200 V 31A 178W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 70
Tube
  • 1 $7.0000
  • 5 $6.9200
  • 30 $6.8400
  • 100 $6.7800
  • 300 $6.6700
$6.6700 / $7.0000 Buy Now
Future Electronics 1200 V 31A 178W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $6.8300
  • 90 $6.7800
  • 150 $6.7600
  • 300 $6.7200
  • 600 $6.6700
$6.6700 / $6.8300 Buy Now
Future Electronics 1200 V 31A 178W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 0
Tube
  • 1 $6.9700
  • 10 $6.8900
  • 40 $6.8300
  • 125 $6.7800
  • 400 $6.6700
$6.6700 / $6.9700 Buy Now
Future Electronics 1200 V 31A 178W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Bulk 0
Bulk
  • 1 $6.9700
  • 10 $6.8900
  • 40 $6.8300
  • 125 $6.7800
  • 400 $6.6700
$6.6700 / $6.9700 Buy Now
DISTI # 69086180
Verical Trans MOSFET N-CH SiC 1.2KV 31A 3-Pin(3+Tab) TO-247 Tube Min Qty: 30 Package Multiple: 30 Date Code: 2322 Americas - 1920
  • 30 $9.9542
  • 480 $9.2751
  • 960 $8.7606
  • 1,440 $8.3612
$8.3612 / $9.9542 Buy Now
Rochester Electronics NTHL080N120SC1A - Silicon Carbide MOSFET, N-Channel, 1200 V, TO247 3L RoHS: Compliant Status: Active Min Qty: 1 96
  • 1 $7.5100
  • 25 $7.3600
  • 100 $7.0600
  • 500 $6.7600
  • 1,000 $6.3800
$6.3800 / $7.5100 Buy Now
DISTI # NTHL080N120SC1A
Avnet Americas Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 110 Milliohms, TO-247, 3 Pins - Rail/Tube (Alt: NTHL080N120SC1A) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube 600
  • 30 $7.6226
  • 40 $7.4166
  • 70 $7.2106
  • 150 $7.0045
  • 300 $6.7985
  • 1,500 $6.5925
  • 3,000 $6.3865
$6.3865 / $7.6226 Buy Now
DISTI # 91AH8487
Avnet Americas Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 110 Milliohms, TO-247, 3 Pins - Bulk (Alt: 91AH8487) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 3 Days Container: Bulk 900 Partner Stock
  • 1 $10.6100
  • 10 $9.9200
  • 25 $9.6300
  • 50 $8.6900
  • 100 $8.2000
$8.2000 / $10.6100 Buy Now
DISTI # NTHL080N120SC1A
TME Transistor: N-MOSFET, unipolar, 1.2kV, 22A, Idm: 132A, 178W, TO247 Min Qty: 1 0
  • 1 $16.7100
  • 3 $14.9900
  • 10 $13.3700
  • 30 $11.8600
$11.8600 / $16.7100 RFQ
Ameya Holding Limited   Min Qty: 450 400
  • 450 $10.3861
  • 900 $10.0746
  • 4,500 $9.7724
$9.7724 / $10.3861 Buy Now
DISTI # NTHL080N120SC1A
Richardson RFPD SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 450 0
  • 450 $6.4400
$6.4400 Buy Now
DISTI # NTHL080N120SC1A
Avnet Asia Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 110 Milliohms, TO-247, 3 Pins (Alt: NTHL080N120SC1A) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 18 Weeks, 0 Days 0
  • 450 $8.1901
  • 900 $6.5340
  • 1,350 $6.4791
  • 2,250 $6.4242
  • 4,500 $6.3693
  • 11,250 $6.3144
  • 22,500 $6.0948
$6.0948 / $8.1901 Buy Now
DISTI # NTHL080N120SC1A
Avnet Silica Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 110 Milliohms, TO-247, 3 Pins (Alt: NTHL080N120SC1A) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 2 Weeks, 5 Days Silica - 0
Buy Now
DISTI # NTHL080N120SC1A
EBV Elektronik Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 110 Milliohms, TO-247, 3 Pins (Alt: NTHL080N120SC1A) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 2 Weeks, 6 Days EBV - 300
Buy Now
DISTI # 3528502
element14 Asia-Pacific MOSFET, N-CH, 1.2KV, 31A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each 592
  • 1 $11.5418
  • 5 $10.7143
  • 10 $9.8867
  • 50 $9.3399
  • 100 $8.9704
$8.9704 / $11.5418 Buy Now
DISTI # 3528502
Farnell MOSFET, N-CH, 1.2KV, 31A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Each 592
  • 1 $11.6542
  • 5 $11.2523
  • 10 $10.8505
  • 50 $10.4360
  • 100 $10.0342
  • 250 $9.6323
$9.6323 / $11.6542 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 30 2448
  • 30 $9.3100
  • 2,448 $8.6900
$8.6900 / $9.3100 Buy Now

Part Details for NTHL080N120SC1A

NTHL080N120SC1A CAD Models

NTHL080N120SC1A Part Data Attributes:

NTHL080N120SC1A onsemi
Buy Now Datasheet
Compare Parts:
NTHL080N120SC1A onsemi Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L, 450-TUBE
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 340CX
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2020-03-09
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 171 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6.5 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 178 W
Pulsed Drain Current-Max (IDM) 132 A
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for NTHL080N120SC1A

This table gives cross-reference parts and alternative options found for NTHL080N120SC1A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTHL080N120SC1A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NVHL080N120SC1 Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3, 450-TUBE, Automotive Qualified onsemi NTHL080N120SC1A vs NVHL080N120SC1
Part Number Description Manufacturer Compare
MSC080SMA120B Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc NTHL080N120SC1A vs MSC080SMA120B
SCT2080KEHRC11 Power Field-Effect Transistor, ROHM Semiconductor NTHL080N120SC1A vs SCT2080KEHRC11
NVHL080N120SC1 Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3, 450-TUBE, Automotive Qualified onsemi NTHL080N120SC1A vs NVHL080N120SC1
MSC080SMA120B4 Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc NTHL080N120SC1A vs MSC080SMA120B4
MSC080SMA120S Power Field-Effect Transistor, 35A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA Microchip Technology Inc NTHL080N120SC1A vs MSC080SMA120S

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