-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Single N-Channel Power MOSFET 30V, 93A, 3.2mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
94W9127
|
Newark | Mosfet Transistor, N Channel, 93 A, 30 V, 0.0027 Ohm, 10 V, 1.63 V Rohs Compliant: Yes |Onsemi NTMFS4935NT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
Buy Now | |
DISTI #
04X6654
|
Newark | Mosfet Transistor, N Channel, 93 A, 30 V, 0.0027 Ohm, 10 V, 1.63 V Rohs Compliant: Yes |Onsemi NTMFS4935NT1G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$0.7030 / $1.1300 | Buy Now |
DISTI #
NTMFS4935NT1G
|
Avnet Americas | Trans MOSFET N-CH 30V 21.8A 8-Pin SO-FL T/R - Tape and Reel (Alt: NTMFS4935NT1G) RoHS: Compliant Min Qty: 867 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 1129881 Partner Stock |
|
$0.3576 / $0.4268 | Buy Now |
DISTI #
70341378
|
RS | NTMFS4935NT1G N-channel MOSFET Transistor, 93 A, 30 V, 8-Pin SO-8FL | ON Semiconductor NTMFS4935NT1G RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
$0.6500 / $0.7500 | RFQ |
|
Bristol Electronics | 5856 |
|
RFQ | ||
|
Quest Components | 4684 |
|
$0.2335 / $0.6670 | Buy Now | |
|
Quest Components | 532 |
|
$0.3335 / $0.6670 | Buy Now | |
|
Rochester Electronics | NTMFS4935N - Power Field-Effect Transistor, 21.8A, 30V, 0.0042ohm, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 1500 |
|
$0.3575 / $0.4206 | Buy Now |
|
Chip Stock | 1344 |
|
RFQ | ||
|
Flip Electronics | Stock, ship today | 1913 |
|
RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
NTMFS4935NT1G
onsemi
Buy Now
Datasheet
|
Compare Parts:
NTMFS4935NT1G
onsemi
Single N-Channel Power MOSFET 30V, 93A, 3.2mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DFN5 5X6, 1.27P (SO 8FL) | |
Pin Count | 5 | |
Manufacturer Package Code | 488AA | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Time@Peak Reflow Temperature-Max (s) | 30 |
This table gives cross-reference parts and alternative options found for NTMFS4935NT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTMFS4935NT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7832PBF | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | NTMFS4935NT1G vs IRF7832PBF |
IRF7862PBF | Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEADFREE, SO-8 | Infineon Technologies AG | NTMFS4935NT1G vs IRF7862PBF |
IRF7862PBF | Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEADFREE, SO-8 | International Rectifier | NTMFS4935NT1G vs IRF7862PBF |
IRF7862TRPBF | Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET | Infineon Technologies AG | NTMFS4935NT1G vs IRF7862TRPBF |
IRF7832 | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | NTMFS4935NT1G vs IRF7832 |
IRF7832TRPBF | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | International Rectifier | NTMFS4935NT1G vs IRF7832TRPBF |
IRF7832TR | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | International Rectifier | NTMFS4935NT1G vs IRF7832TR |
IRF7832PBF | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | NTMFS4935NT1G vs IRF7832PBF |
IRF7832TR | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | NTMFS4935NT1G vs IRF7832TR |