Part Details for SGSIF321 by STMicroelectronics
Results Overview of SGSIF321 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SGSIF321 Information
SGSIF321 by STMicroelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
US Tariff Estimator: SGSIF321 by STMicroelectronics
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for SGSIF321
SGSIF321 Part Data Attributes
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SGSIF321
STMicroelectronics
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SGSIF321
STMicroelectronics
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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| Part Life Cycle Code | Obsolete | |
| Part Package Code | SFM | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | Hollow-Emitter | |
| Case Connection | Isolated | |
| Collector Current-Max (IC) | 5 A | |
| Collector-Emitter Voltage-Max | 400 V | |
| Configuration | Single | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | Npn | |
| Power Dissipation Ambient-Max | 35 W | |
| Power Dissipation-Max (Abs) | 35 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin Lead | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Transition Frequency-Nom (fT) | 0.07 Mhz | |
| Turn-off Time-Max (toff) | 2800 Ns | |
| Turn-on Time-Max (ton) | 1000 Ns | |
| VCEsat-Max | 1.5 V |
Alternate Parts for SGSIF321
This table gives cross-reference parts and alternative options found for SGSIF321. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGSIF321, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| TP3V80HFX | Shindengen Electronic Manufacturing Co Ltd | Check for Price | Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | SGSIF321 vs TP3V80HFX |
| SGSIF463 | STMicroelectronics | Check for Price | Power Bipolar Transistor, 12A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin | SGSIF321 vs SGSIF463 |
| SDT3509 | Solitron Devices Inc | Check for Price | Power Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin | SGSIF321 vs SDT3509 |
| SDT9209 | Baneasa SA | Check for Price | Power Bipolar Transistor, 15A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin | SGSIF321 vs SDT9209 |
| SDT3706 | Solitron Devices Inc | Check for Price | Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin | SGSIF321 vs SDT3706 |
| SGSF661 | STMicroelectronics | Check for Price | Power Bipolar Transistor, 30A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin | SGSIF321 vs SGSF661 |
| SGSF464 | STMicroelectronics | Check for Price | Power Bipolar Transistor, 10A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin | SGSIF321 vs SGSF464 |
| S2055AF | Toshiba America Electronic Components | Check for Price | Power Bipolar Transistor, 8A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | SGSIF321 vs S2055AF |
| THD219HI | STMicroelectronics | Check for Price | Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | SGSIF321 vs THD219HI |
| SDT3704 | Solitron Devices Inc | Check for Price | Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin | SGSIF321 vs SDT3704 |