Part Details for SPW20N60C3FKSA1 by Infineon Technologies AG
Overview of SPW20N60C3FKSA1 by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SPW20N60C3FKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
98K0739
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Newark | N Channel Mosfet, 650V, 20.7A, To-247, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:20.7A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Infineon SPW20N60C3FKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 908 |
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$4.0400 / $6.6800 | Buy Now |
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DISTI #
79AH6749
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Newark | High Power_Legacy Rohs Compliant: Yes |Infineon SPW20N60C3FKSA1 Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$7.9100 | Buy Now |
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DISTI #
448-SPW20N60C3FKSA1-ND
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DigiKey | MOSFET N-CH 650V 20.7A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
233 In Stock |
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$3.1339 / $6.4400 | Buy Now |
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DISTI #
SPW20N60C3FKSA1
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Avnet Americas | Trans MOSFET N-CH 650V 20.7A 3-Pin TO-247 Tube - Rail/Tube (Alt: SPW20N60C3FKSA1) RoHS: Not Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$2.9795 / $3.6179 | Buy Now |
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DISTI #
98K0739
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Avnet Americas | Trans MOSFET N-CH 650V 20.7A 3-Pin TO-247 Tube - Bulk (Alt: 98K0739) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 14 Partner Stock |
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$4.3900 / $6.3300 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.19 Ohm 114 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 420Tube |
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$3.2400 / $3.7400 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.19 Ohm 114 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube | 0Tube |
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$3.2400 / $3.4200 | Buy Now |
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Ameya Holding Limited | Min Qty: 8 | 204 |
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$10.5810 / $10.9057 | Buy Now |
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DISTI #
SP000013729
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EBV Elektronik | Trans MOSFET N-CH 650V 20.7A 3-Pin TO-247 Tube (Alt: SP000013729) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 650V 20.7A 208W 190m13.1A10V 3.9V1mA 1PCSNChannel TO-247-3 MOSFETs ROHS | 8 |
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$6.1072 | Buy Now |
Part Details for SPW20N60C3FKSA1
SPW20N60C3FKSA1 CAD Models
SPW20N60C3FKSA1 Part Data Attributes:
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SPW20N60C3FKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPW20N60C3FKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247AD | |
| Package Description | GREEN, PLASTIC, TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20.7 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 62.1 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SPW20N60C3FKSA1
This table gives cross-reference parts and alternative options found for SPW20N60C3FKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPW20N60C3FKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPW24N60CFDXK | Power Field-Effect Transistor, 21.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPW20N60C3FKSA1 vs SPW24N60CFDXK |
| STW24NM65N | 19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | SPW20N60C3FKSA1 vs STW24NM65N |
| SPB20N60S5ATMA1 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPW20N60C3FKSA1 vs SPB20N60S5ATMA1 |
| STW28N65M2 | N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package | STMicroelectronics | SPW20N60C3FKSA1 vs STW28N65M2 |
| SPI20N60C3HKSA1 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SPW20N60C3FKSA1 vs SPI20N60C3HKSA1 |
| APT20N60BCF | Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Microsemi Corporation | SPW20N60C3FKSA1 vs APT20N60BCF |
| SIHB22N60EL-GE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2 | Vishay Intertechnologies | SPW20N60C3FKSA1 vs SIHB22N60EL-GE3 |
| STI20NM65N | 19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | SPW20N60C3FKSA1 vs STI20NM65N |
| SIHP22N60S-E3 | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Intertechnologies | SPW20N60C3FKSA1 vs SIHP22N60S-E3 |
| IPW60R190C6XK | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPW20N60C3FKSA1 vs IPW60R190C6XK |