Part Details for SST25VF032B-80-4I-S2AF by Silicon Storage Technology
Results Overview of SST25VF032B-80-4I-S2AF by Silicon Storage Technology
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SST25VF032B-80-4I-S2AF Information
SST25VF032B-80-4I-S2AF by Silicon Storage Technology is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for SST25VF032B-80-4I-S2AF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Memory ICs | 6325 |
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RFQ |
US Tariff Estimator: SST25VF032B-80-4I-S2AF by Silicon Storage Technology
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for SST25VF032B-80-4I-S2AF
SST25VF032B-80-4I-S2AF Part Data Attributes
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SST25VF032B-80-4I-S2AF
Silicon Storage Technology
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Datasheet
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SST25VF032B-80-4I-S2AF
Silicon Storage Technology
Flash Memory,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Package Description | , | |
| Reach Compliance Code | Unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| JESD-609 Code | e4 | |
| Terminal Finish | Gold (Au) - With Nickel (Ni) Barrier |
SST25VF032B-80-4I-S2AF Frequently Asked Questions (FAQ)
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The SST25VF032B-80-4I-S2AF has a minimum of 100,000 erase cycles per sector, and a minimum of 10,000 erase cycles per block.
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The HOLD# pin should be driven high during active operations to prevent the device from entering the hold state. If the HOLD# pin is driven low during an active operation, the device will enter the hold state and the operation will be paused.
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The recommended power-up sequence is to apply VCC first, followed by the input signals (e.g. CE#, OE#, WE#, etc.). This ensures that the device is properly initialized and ready for operation.
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The SST25VF032B-80-4I-S2AF has a density of 32 Mbits and is organized as 2048 blocks of 16 Kbytes each. The device can be queried using the JEDEC ID command (9Fh) to determine its density and organization.
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The WP# pin is used to enable or disable the write protection feature. When WP# is driven low, the write protection feature is enabled, and the device will not allow writes to the status register or the memory array. When WP# is driven high, the write protection feature is disabled, and writes to the status register and memory array are allowed.