| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUK7604-40A | Nexperia | Check for Price | Power Field-Effect Transistor, 75A I(D), 36V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STB200NF04T4 vs BUK7604-40A |
| STB190NF04T4 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 120A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STB200NF04T4 vs STB190NF04T4 |
| NP80N04EHE | Renesas Electronics Corporation | Check for Price | Power Field-Effect Transistor, 80A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STB200NF04T4 vs NP80N04EHE |
| BUK964R4-40B | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STB200NF04T4 vs BUK964R4-40B |
| BUK964R4-40B | Nexperia | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STB200NF04T4 vs BUK964R4-40B |
| NP80N04EHE | NEC Electronics Group | Check for Price | Power Field-Effect Transistor, 80A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STB200NF04T4 vs NP80N04EHE |
| PHB225NQ04T | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STB200NF04T4 vs PHB225NQ04T |
| BUK763R1-40B | Nexperia | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STB200NF04T4 vs BUK763R1-40B |
| BUK964R4-40B,118 | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STB200NF04T4 vs BUK964R4-40B,118 |
| BUK7604-40A/T3 | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 75A I(D), 36V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STB200NF04T4 vs BUK7604-40A/T3 |
Part Details for STB200NF04T4 by STMicroelectronics
Results Overview of STB200NF04T4 by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STB200NF04T4 Information
STB200NF04T4 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STB200NF04T4
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
497-3513-2-ND
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DigiKey | MOSFET N-CH 40V 120A D2PAK Min Qty: 1000 Container: Tape & Reel |
0 Tape & Reel |
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$1.6413 / $1.6613 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 120A I(D), 40V, 0.0037OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2 |
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$3.3300 | Buy Now |
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Vyrian | Power Field-Effect Transistor, 120A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8872 |
|
RFQ |
STB200NF04T4 Part Data Attributes
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STB200NF04T4
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB200NF04T4
STMicroelectronics
Power Field-Effect Transistor, 120A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | D2pak-3 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 1300 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0037 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 310 W | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STB200NF04T4
This table gives cross-reference parts and alternative options found for STB200NF04T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB200NF04T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STB200NF04T4 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STB200NF04T4 is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
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The maximum current rating for the STB200NF04T4 is 200A, but it's essential to consider the device's thermal limitations and ensure proper cooling to prevent overheating.
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Yes, the STB200NF04T4 is suitable for high-frequency switching applications, but it's crucial to consider the device's switching losses, and ensure proper gate drive and layout to minimize electromagnetic interference (EMI).
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To protect the STB200NF04T4, it's recommended to use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, and ensure that the device is operated within its recommended specifications.