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Part Details for STF7N65M2 by STMicroelectronics
Results Overview of STF7N65M2 by STMicroelectronics
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STF7N65M2 Information
STF7N65M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STF7N65M2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STF7N65M2
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Avnet Americas | - Rail/Tube (Alt: STF7N65M2) COO: China RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Container: Tube | 0 |
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$0.6691 / $0.6831 | Buy Now |
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STMicroelectronics | N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP package COO: China RoHS: Compliant Min Qty: 1 | 0 |
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$0.8500 / $2.2800 | Buy Now |
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Bristol Electronics | Trans MOSFET N-CH 650V 5A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1 | 297 |
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$0.8865 / $1.7730 | Buy Now |
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Quest Components | 237 |
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$0.8274 / $2.3640 | Buy Now | |
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Quest Components | 237 |
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$1.3120 / $2.8368 | Buy Now | |
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DISTI #
STF7N65M2
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TME | Transistor: N-MOSFET, unipolar, 650V, 5A, Idm: 20A, 20W, TO220FP Min Qty: 1 | 0 |
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$0.8600 / $2.1400 | RFQ |
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ComSIT USA | N-CHANNEL 650 V, 0.98 OHM TYP., 5 A MDMESH M2 POWER MOSFET IN IPAK PACKAGE Power Field-Effect Transistor ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Vyrian | Power Field-Effect Transistor | 7232 |
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RFQ |
Part Details for STF7N65M2
STF7N65M2 CAD Models
STF7N65M2 Part Data Attributes
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STF7N65M2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STF7N65M2
STMicroelectronics
Power Field-Effect Transistor, 5A I(D), 650V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | To-220fp, 3 Pin | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Avalanche Energy Rating (Eas) | 103 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 1.15 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 0.8 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
STF7N65M2 Frequently Asked Questions (FAQ)
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The maximum operating junction temperature for the STF7N65M2 is 175°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 650V. Additionally, the device should be operated within the recommended operating area (SOA) to prevent overheating and ensure reliability.
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The recommended gate resistor value for the STF7N65M2 is between 1kΩ and 10kΩ, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) and improve noise immunity.
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To protect the STF7N65M2 from overvoltage and overcurrent, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
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For optimal thermal performance, the STF7N65M2 should be mounted on a PCB with a thermal pad and a heat sink. The PCB layout should also be designed to minimize parasitic inductance and capacitance, and to ensure good thermal conduction between the device and the heat sink.