| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STF10N60M2 | STMicroelectronics | $0.8845 | Power Field-Effect Transistor, 7.5A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STF8NM60N vs STF10N60M2 |
| STF19NM50N | STMicroelectronics | $1.8000 | Power Field-Effect Transistor, 14A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STF8NM60N vs STF19NM50N |
| STF5N52K3 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STF8NM60N vs STF5N52K3 |
| STF12NK60Z | STMicroelectronics | Check for Price | Power Field-Effect Transistor | STF8NM60N vs STF12NK60Z |
| STF12NM50ND | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 11A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STF8NM60N vs STF12NM50ND |
| STF10NM60ND | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 8A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STF8NM60N vs STF10NM60ND |
| STF10NM50N | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 7A I(D), 500V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STF8NM60N vs STF10NM50N |
| STF13N95K3 | STMicroelectronics | Check for Price | Power Field-Effect Transistor | STF8NM60N vs STF13N95K3 |
| STF5N52U | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STF8NM60N vs STF5N52U |
| STF11NM60N | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 10A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STF8NM60N vs STF11NM60N |
Part Details for STF8NM60N by STMicroelectronics
Results Overview of STF8NM60N by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STF8NM60N Information
STF8NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STF8NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
497-7475-5-ND
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DigiKey | MOSFET N-CH 600V 7A TO220FP Min Qty: 1000 Container: Tube |
0 Tube |
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$1.1410 | Buy Now |
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Vyrian | Power Field-Effect Transistor, 7A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8850 |
|
RFQ |
STF8NM60N Part Data Attributes
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STF8NM60N
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STF8NM60N
STMicroelectronics
Power Field-Effect Transistor, 7A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | Rohs Compliant, To-220fp, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 200 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.65 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STF8NM60N
This table gives cross-reference parts and alternative options found for STF8NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STF8NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STF8NM60N Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) of the STF8NM60N is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure a long lifespan.
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To calculate the power dissipation of the STF8NM60N, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance from junction to ambient (RthJA). The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
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The recommended gate drive voltage for the STF8NM60N is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure that the gate drive voltage is within the recommended range to prevent damage to the device.
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Yes, the STF8NM60N is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the device is properly driven to minimize switching losses.
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To protect the STF8NM60N from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and current sense resistors. Additionally, ensure that the device is properly heatsinked and that the thermal management system is designed to handle the maximum power dissipation.