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Transistors Power Field-Effect Transistors STP30NE06

Transistors
STP30NE06
STMicroelectronics
Description: 30A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Overview of STP30NE06 by STMicroelectronics

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STP30NE06 by STMicroelectronics

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   Min Qty: 4 650
  • 4 $1.6500
  • 14 $1.2375
  • 42 $1.0312
  • 147 $0.6187
  • 486 $0.5775
$0.5775 / $1.6500 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220 520
  • 1 $2.2000
  • 183 $0.7700
  • 391 $0.7150
$0.7150 / $2.2000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220 77
  • 1 $1.9950
  • 14 $0.9975
  • 61 $0.5985
$0.5985 / $1.9950 Buy Now

CAD Models for STP30NE06 by STMicroelectronics
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Part Data Attributes for STP30NE06 by STMicroelectronics
Parametric Data

STP30NE06
STMicroelectronics
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
100 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
30 A
Drain-source On Resistance-Max
0.05 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
80 W
Pulsed Drain Current-Max (IDM)
120 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. STP30NE06
    STMicroelectronics
    30A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
    VS

Alternate Parts for STP30NE06

This table gives cross-reference parts and alternative options found for STP30NE06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP30NE06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HUF75309P3 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation STP30NE06 vs HUF75309P3
BUZ10 Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Siemens STP30NE06 vs BUZ10
BUZ11A Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens STP30NE06 vs BUZ11A
BUZ10 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG STP30NE06 vs BUZ10
HUF75309P3_NL Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation STP30NE06 vs HUF75309P3_NL
RFP25N06 25A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC STP30NE06 vs RFP25N06
BUZ11A 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics STP30NE06 vs BUZ11A
BUZ10 TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,20A I(D),TO-220AB Freescale Semiconductor STP30NE06 vs BUZ10
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation STP30NE06 vs IRFZ30
BUZ10 Power Field-Effect Transistor, 19.3A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors STP30NE06 vs BUZ10
Part Number Description Manufacturer Compare
BUK453-60A TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors STP30NE06 vs BUK453-60A
RFD14N05L N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ, 1800-TUBE onsemi STP30NE06 vs RFD14N05L
NTD18N06LT4G Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi STP30NE06 vs NTD18N06LT4G
2SK2412-AZ Power Field-Effect Transistor, 20A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN NEC Electronics Group STP30NE06 vs 2SK2412-AZ
MTD1N50E 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi STP30NE06 vs MTD1N50E
FQD24N08 Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation STP30NE06 vs FQD24N08
IRFR024NTRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2 Infineon Technologies AG STP30NE06 vs IRFR024NTRPBF
RFD14N05_NL Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN Fairchild Semiconductor Corporation STP30NE06 vs RFD14N05_NL
NTD18N06 18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi STP30NE06 vs NTD18N06
STD30NE06 30A, 60V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 STMicroelectronics STP30NE06 vs STD30NE06

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