| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFS840 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP9NB60FP vs IRFS840 |
Part Details for STP9NB60FP by STMicroelectronics
Results Overview of STP9NB60FP by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP9NB60FP Information
STP9NB60FP by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
STP9NB60FP Part Data Attributes
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STP9NB60FP
STMicroelectronics
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Datasheet
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STP9NB60FP
STMicroelectronics
Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | To-220fp, 3 Pin | |
| Pin Count | 3 | |
| Similar Group | Tr0810021002yyyy10059067 | |
| ECCN Code | EAR99 | |
| Additional Feature | High Voltage | |
| Avalanche Energy Rating (Eas) | 850 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STP9NB60FP
This table gives cross-reference parts and alternative options found for STP9NB60FP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP9NB60FP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.