| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFH26N50Q | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | STW6NA80 vs IXFH26N50Q |
| NDP506B | National Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 24A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STW6NA80 vs NDP506B |
| IRFP244B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 16A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STW6NA80 vs IRFP244B |
| STP3NB80 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 2.6A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STW6NA80 vs STP3NB80 |
| STD3NA50T4 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 2.7A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | STW6NA80 vs STD3NA50T4 |
| STH8NA60 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | STW6NA80 vs STH8NA60 |
| STP7NE10 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 7A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STW6NA80 vs STP7NE10 |
| FX3AS-06 | Powerex Power Semiconductors | Check for Price | Power Field-Effect Transistor, 3A I(D), 60V, 0.54ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | STW6NA80 vs FX3AS-06 |
| IXFK100N25 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 100A I(D), 250V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264 | STW6NA80 vs IXFK100N25 |
| STD7NK30Z | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 5A I(D), 300V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | STW6NA80 vs STD7NK30Z |
Part Details for STW6NA80 by STMicroelectronics
Results Overview of STW6NA80 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STW6NA80 Information
STW6NA80 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STW6NA80
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | N-CHANNEL 800V-1.8 OHM-5.4A TO-247 FAST POWER MOS TRANSISTOR Power Field-Effect Transistor, 5.4A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 ECCN: EAR99 RoHS: Not Compliant |
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STW6NA80 Part Data Attributes
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STW6NA80
STMicroelectronics
Buy Now
Datasheet
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STW6NA80
STMicroelectronics
Power Field-Effect Transistor, 5.4A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active Unconfirmed | |
| Part Package Code | TO-247 | |
| Package Description | To-247, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 150 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 5.4 A | |
| Drain-source On Resistance-Max | 2.2 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 50 Pf | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-on Time-Max (ton) | 190 Ns |
Alternate Parts for STW6NA80
This table gives cross-reference parts and alternative options found for STW6NA80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW6NA80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STW6NA80 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STW6NA80 is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade at extreme temperatures.
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To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Typically, this involves connecting the gate to a voltage source, and the drain to a load or a voltage source, while ensuring the device is operated within its safe operating area (SOA).
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The recommended gate drive voltage for the STW6NA80 is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage selection.
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To protect the STW6NA80 from overvoltage and overcurrent conditions, implement proper overvoltage protection (OVP) and overcurrent protection (OCP) circuits. This may include using voltage regulators, zener diodes, and current sense resistors, as well as designing the PCB with adequate clearance and creepage distances.
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For optimal thermal management, ensure good heat dissipation by using a thermally conductive PCB material, and provide adequate copper area for heat spreading. Follow the recommended PCB layout guidelines in the datasheet and application notes, and consider using thermal interface materials (TIMs) and heat sinks if necessary.