| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| TP3V80HFX | Shindengen Electronic Manufacturing Co Ltd | Check for Price | Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | THD200FI vs TP3V80HFX |
| SGSF464 | STMicroelectronics | Check for Price | Power Bipolar Transistor, 10A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin | THD200FI vs SGSF464 |
| ST1802FX | STMicroelectronics | Check for Price | Power Bipolar Transistor, 10A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | THD200FI vs ST1802FX |
| SGSF313 | STMicroelectronics | Check for Price | Power Bipolar Transistor, 7A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | THD200FI vs SGSF313 |
| SDT3516 | Solitron Devices Inc | Check for Price | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin | THD200FI vs SDT3516 |
| SDT3754 | Solitron Devices Inc | Check for Price | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin | THD200FI vs SDT3754 |
| SDT6904 | Solitron Devices Inc | Check for Price | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin | THD200FI vs SDT6904 |
| S2000 | Toshiba America Electronic Components | Check for Price | Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | THD200FI vs S2000 |
| SDT3721 | Solitron Devices Inc | Check for Price | Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin | THD200FI vs SDT3721 |
| SDT3718 | Solitron Devices Inc | Check for Price | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin | THD200FI vs SDT3718 |
Part Details for THD200FI by STMicroelectronics
Results Overview of THD200FI by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Education and Research
Environmental Monitoring
Industrial Automation
Audio and Video Systems
Agriculture Technology
Medical Imaging
THD200FI Information
THD200FI by STMicroelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for THD200FI
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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Quest Components | 40 |
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$5.7572 / $9.3360 | Buy Now |
US Tariff Estimator: THD200FI by STMicroelectronics
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
THD200FI Part Data Attributes
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THD200FI
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
THD200FI
STMicroelectronics
Power Bipolar Transistor, 10A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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| Part Life Cycle Code | Obsolete | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | Isolated | |
| Collector Current-Max (IC) | 10 A | |
| Collector-Emitter Voltage-Max | 700 V | |
| Configuration | Single | |
| DC Current Gain-Min (hFE) | 6.5 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | Npn | |
| Power Dissipation Ambient-Max | 57 W | |
| Power Dissipation-Max (Abs) | 57 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 3310 Ns | |
| VCEsat-Max | 1.5 V |
Alternate Parts for THD200FI
This table gives cross-reference parts and alternative options found for THD200FI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of THD200FI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
THD200FI Frequently Asked Questions (FAQ)
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STMicroelectronics provides a recommended PCB layout in the application note AN5323, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
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The THD200FI has a programmable input voltage range, which can be configured using the VSENSE pin. The device can be configured for input voltage ranges from 10V to 100V by connecting a resistor divider network to the VSENSE pin, as described in the datasheet.
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The THD200FI has an operating temperature range of -40°C to 125°C, but the device can be derated for operation above 85°C. The derating curve is provided in the datasheet, and it's essential to follow it to ensure reliable operation.
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To ensure EMC, it's essential to follow the recommended PCB layout and component placement guidelines, use a shielded enclosure, and add EMI filters to the input and output lines. Additionally, the THD200FI has built-in EMI filters, and the device can be configured to operate in a low-EMI mode.
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The typical start-up time for the THD200FI is around 10ms, but this can vary depending on the input voltage, output load, and configuration. The start-up time can be reduced by using a faster start-up capacitor or by configuring the device for a faster start-up mode.