Part Details for UPD4564323G5-A10-9JH by Elpida Memory Inc
Overview of UPD4564323G5-A10-9JH by Elpida Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for UPD4564323G5-A10-9JH
UPD4564323G5-A10-9JH CAD Models
UPD4564323G5-A10-9JH Part Data Attributes
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UPD4564323G5-A10-9JH
Elpida Memory Inc
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Datasheet
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UPD4564323G5-A10-9JH
Elpida Memory Inc
Synchronous DRAM, 2MX32, 6ns, MOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ELPIDA MEMORY INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP86,.46,20 | |
| Pin Count | 86 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G86 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 86 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 2MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP86,.46,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.18 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | MOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for UPD4564323G5-A10-9JH
This table gives cross-reference parts and alternative options found for UPD4564323G5-A10-9JH. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPD4564323G5-A10-9JH, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TC59S6432DFTLI-70 | IC 2M X 32 SYNCHRONOUS DRAM, 4.4 ns, PDSO86, 0.400 ICNH, 0.50 MM PITCH, PLASTIC, TSOP2-86, Dynamic RAM | Toshiba America Electronic Components | UPD4564323G5-A10-9JH vs TC59S6432DFTLI-70 |
| M2V53S50ETP-7L | Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Elpida Memory Inc | UPD4564323G5-A10-9JH vs M2V53S50ETP-7L |
| AS4SD2M32DGX-75XT | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, PLASTIC, TSOP2-86 | Micross Components | UPD4564323G5-A10-9JH vs AS4SD2M32DGX-75XT |
| VG36643211BT-10 | Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86 | Vanguard International Semiconductor Corporation | UPD4564323G5-A10-9JH vs VG36643211BT-10 |
| EDS6432AFTA-75TI-E | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, ROHS COMPLIANT, PLASTIC, TSOP2-86 | Elpida Memory Inc | UPD4564323G5-A10-9JH vs EDS6432AFTA-75TI-E |
| HY57V643220CLT-S | Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, TSOP2-86 | SK Hynix Inc | UPD4564323G5-A10-9JH vs HY57V643220CLT-S |
| KM432S2020BT-G10 | Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | UPD4564323G5-A10-9JH vs KM432S2020BT-G10 |
| TC59S6432DFTL-60 | IC 2M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86, 0.400 ICNH, 0.50 MM PITCH, PLASTIC, TSOP2-86, Dynamic RAM | Toshiba America Electronic Components | UPD4564323G5-A10-9JH vs TC59S6432DFTL-60 |
| HY57V563220ALT-H | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, 0.80 MM PITCH, TSOP2-86 | SK Hynix Inc | UPD4564323G5-A10-9JH vs HY57V563220ALT-H |
| MB811643242A-84FN | Synchronous DRAM, 2MX32, 56ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 | FUJITSU Semiconductor Limited | UPD4564323G5-A10-9JH vs MB811643242A-84FN |