Part Details for W9412G6KH-5 by Winbond Electronics Corp
Results Overview of W9412G6KH-5 by Winbond Electronics Corp
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
W9412G6KH-5 Information
W9412G6KH-5 by Winbond Electronics Corp is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for W9412G6KH-5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
W9412G6KH-5-ND
|
DigiKey | IC DRAM 128MBIT SSTL2 66TSOP II Min Qty: 1 Lead time: 24 Weeks Container: Tray | Temporarily Out of Stock |
|
$1.5655 / $2.0800 | Buy Now |
|
DISTI #
454-W9412G6KH-5
|
Mouser Electronics | DRAM 128Mb DDR SDRAM x16 200MHz, 46nm RoHS: Compliant | 305 |
|
$1.4800 / $2.2300 | Buy Now |
|
|
NAC | 128Mb DDR SDRAM x16 200MHz, 46nm, TSOPII 66 Package RoHS: Compliant Min Qty: 108 Package Multiple: 108 | 0 |
|
$1.0500 / $1.1600 | Buy Now |
US Tariff Estimator: W9412G6KH-5 by Winbond Electronics Corp
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for W9412G6KH-5
W9412G6KH-5 CAD Models
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
W9412G6KH-5 Part Data Attributes
|
|
W9412G6KH-5
Winbond Electronics Corp
Buy Now
Datasheet
|
Compare Parts:
W9412G6KH-5
Winbond Electronics Corp
DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOP2-66
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Tsop2, | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | Four Bank Page Burst | |
| Access Time-Max | 0.7 Ns | |
| Additional Feature | Auto/Self Refresh | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e3 | |
| Length | 22.22 Mm | |
| Memory Density | 134217728 Bit | |
| Memory IC Type | Ddr1 Dram | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 8388608 Words | |
| Number of Words Code | 8000000 | |
| Operating Mode | Synchronous | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8mx16 | |
| Package Body Material | Plastic/Epoxy | |
| Package Code | TSOP2 | |
| Package Shape | Rectangular | |
| Package Style | Small Outline, Thin Profile | |
| Peak Reflow Temperature (Cel) | 260 | |
| Seated Height-Max | 1.2 Mm | |
| Self Refresh | Yes | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | Yes | |
| Technology | Cmos | |
| Temperature Grade | Commercial | |
| Terminal Finish | Tin | |
| Terminal Form | Gull Wing | |
| Terminal Pitch | 0.65 Mm | |
| Terminal Position | Dual | |
| Width | 10.16 Mm |
Alternate Parts for W9412G6KH-5
This table gives cross-reference parts and alternative options found for W9412G6KH-5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W9412G6KH-5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NT5DS8M16IS-6K | Nanya Technology Corporation | Check for Price | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOP2-66 | W9412G6KH-5 vs NT5DS8M16IS-6K |
| W9412G6KH-5I | Winbond Electronics Corp | Check for Price | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOP2-66 | W9412G6KH-5 vs W9412G6KH-5I |
| W9412G6JH-5I | Winbond Electronics Corp | Check for Price | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 | W9412G6KH-5 vs W9412G6JH-5I |
| W94124G6KH-5 | Winbond Electronics Corp | Check for Price | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 | W9412G6KH-5 vs W94124G6KH-5 |
| NT5DS8M16IS-5TI | Nanya Technology Corporation | Check for Price | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOP2-66 | W9412G6KH-5 vs NT5DS8M16IS-5TI |
| M13S128168A-5TG2N | Elite Semiconductor Memory Technology Inc | Check for Price | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | W9412G6KH-5 vs M13S128168A-5TG2N |
| M13S128168A-6BG2N | Elite Semiconductor Memory Technology Inc | Check for Price | DDR DRAM, 8MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-60 | W9412G6KH-5 vs M13S128168A-6BG2N |
| M13S128168A-5BG2N | Elite Semiconductor Memory Technology Inc | Check for Price | DDR DRAM, 8MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-60 | W9412G6KH-5 vs M13S128168A-5BG2N |
| NT5DS8M16IS-5T | Nanya Technology Corporation | Check for Price | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOP2-66 | W9412G6KH-5 vs NT5DS8M16IS-5T |
| EM6A9160TSC-5G | Etron Technology Inc | Check for Price | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOPII-66 | W9412G6KH-5 vs EM6A9160TSC-5G |
W9412G6KH-5 Frequently Asked Questions (FAQ)
-
A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the signal traces short and away from noise sources. Refer to the application note for more details.
-
Power-up: Apply VCC first, then VPP. Power-down: Remove VPP first, then VCC. Ensure a minimum of 100ms delay between power-up and initialization.
-
The maximum allowed voltage on the I/O pins is VCC + 0.5V. Exceeding this may cause damage to the device.
-
Use a 10kΩ resistor and a 10uF capacitor to create a power-on reset circuit. This ensures a clean reset signal during power-up.
-
The clock signal should have a rise and fall time of <5ns, and a clock frequency tolerance of ±100ppm.