Part Details for BLF278,112 by NXP Semiconductors
Overview of BLF278,112 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Price & Stock for BLF278,112
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70R2768
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Newark | N Channel Vhf Push/Pull Power Vdmos, 50V, 108Mhz - 225Mhz, 5-Sot-262A1, Drain Source Voltage Vds:50V, Continuous Drain Current Id:18A, Power Dissipation:500W, Operating Frequency Min:108Mhz, Operating Frequency Max:225Mhz, Msl:- Rohs Compliant: Yes |Nxp BLF278,112 Min Qty: 60 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for BLF278,112
BLF278,112 CAD Models
BLF278,112 Part Data Attributes
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BLF278,112
NXP Semiconductors
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Datasheet
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Compare Parts:
BLF278,112
NXP Semiconductors
BLF278
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | DFM | |
Package Description | SOT-262A1, 4 PIN | |
Pin Count | 2 | |
Manufacturer Package Code | SOT262A1 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Samacsys Manufacturer | NXP | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | COMMON SOURCE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 125 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | R-CDFM-F4 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 200 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 500 W | |
Power Dissipation-Max (Abs) | 500 W | |
Power Gain-Min (Gp) | 20 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for BLF278,112
This table gives cross-reference parts and alternative options found for BLF278,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF278,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MRF151G | RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN | MACOM | BLF278,112 vs MRF151G |
MRF151G | RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN | Motorola Semiconductor Products | BLF278,112 vs MRF151G |
BLF278 | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.385 X 0.850 INCH, FM-4 | Advanced Semiconductor Inc | BLF278,112 vs BLF278 |
BLF278 | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-262A1, 4 PIN | NXP Semiconductors | BLF278,112 vs BLF278 |
933978520112 | TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power | NXP Semiconductors | BLF278,112 vs 933978520112 |
MRF151G | RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.850 X 0.385 INCH, LFG, 4 PIN | Advanced Semiconductor Inc | BLF278,112 vs MRF151G |