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Transistors Power Field-Effect Transistors BSP129E6327

Transistors
BSP129E6327
Description: Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Overview of BSP129E6327 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Audio and Video Systems Automotive

Price & Stock for BSP129E6327 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 0.2A I(D), 240V, 20OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 47200
  • 1 $0.9000
  • 2,223 $0.3150
  • 4,763 $0.2700
$0.2700 / $0.9000 Buy Now
ComSIT USA SIPMOS SMALL-SIGNAL TRANSISTOR Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant Stock EU - 930
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

CAD Models for BSP129E6327 by Infineon Technologies AG
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Part Data Attributes for BSP129E6327 by Infineon Technologies AG
Parametric Data

BSP129E6327
Infineon Technologies AG
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
SOT-223
Package Description
SOT-223, 4 PIN
Pin Count
4
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
240 V
Drain Current-Max (ID)
0.2 A
Drain-source On Resistance-Max
20 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G4
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
4
Operating Mode
DEPLETION MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
1.8 W
Pulsed Drain Current-Max (IDM)
0.6 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Element Material
SILICON
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  1. BSP129E6327
    Infineon Technologies AG
    Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
    VS

Alternate Parts for BSP129E6327

This table gives cross-reference parts and alternative options found for BSP129E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP129E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BSP129E-6327 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Infineon Technologies AG BSP129E6327 vs BSP129E-6327
BSP129L6327 Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP129E6327 vs BSP129L6327
BSP129E7941 Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP129E6327 vs BSP129E7941
BSP129 Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Infineon Technologies AG BSP129E6327 vs BSP129
BSP129E-6327 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Siemens BSP129E6327 vs BSP129E-6327
Part Number Description Manufacturer Compare
BSP125 Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, SOT-223, 4 PIN Infineon Technologies AG BSP129E6327 vs BSP125
BSP135L6906 Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP129E6327 vs BSP135L6906
BSP129E-6327 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Siemens BSP129E6327 vs BSP129E-6327
BSP88 Power Field-Effect Transistor, 0.29A I(D), 240V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens BSP129E6327 vs BSP88
BSP88 Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN Infineon Technologies AG BSP129E6327 vs BSP88
BSP129E7941 Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP129E6327 vs BSP129E7941
BSP324 Power Field-Effect Transistor, 0.17A I(D), 400V, 25ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, SOT-223, 4 PIN Infineon Technologies AG BSP129E6327 vs BSP324
BSP300L6433 Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP129E6327 vs BSP300L6433
BSP135E6906 Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP129E6327 vs BSP135E6906
BSP129 Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Infineon Technologies AG BSP129E6327 vs BSP129

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