Part Details for BUP314D by Infineon Technologies AG
Overview of BUP314D by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BUP314D
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | DUO PACK IGBT TO-218 Insulated Gate Bipolar Transistor, 42A I(C), 1200V V(BR)CES, N-Channel, TO-218 RoHS: Not Compliant | Europe - 25 |
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RFQ |
Part Details for BUP314D
BUP314D CAD Models
BUP314D Part Data Attributes:
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BUP314D
Infineon Technologies AG
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Datasheet
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BUP314D
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 42A I(C), 1200V V(BR)CES, N-Channel, TO-218
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH SPEED | |
| Collector Current-Max (IC) | 42 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 60 ns | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-218 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 100 ns | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 420 ns | |
| Turn-on Time-Nom (ton) | 75 ns |
Alternate Parts for BUP314D
This table gives cross-reference parts and alternative options found for BUP314D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUP314D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGT1S3N60B3S | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | BUP314D vs HGT1S3N60B3S |
| APT45GL100BN | 45A, 1000V, N-CHANNEL IGBT, TO-247 | Microsemi Corporation | BUP314D vs APT45GL100BN |
| IRG4BC20W-S | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | Infineon Technologies AG | BUP314D vs IRG4BC20W-S |
| HGTP20N60C3R | Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel | Fairchild Semiconductor Corporation | BUP314D vs HGTP20N60C3R |
| IRGPC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC | International Rectifier | BUP314D vs IRGPC50U |
| IRG4BC20FD-STRR | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | BUP314D vs IRG4BC20FD-STRR |
| HGTD7N60C3S9A | 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL | onsemi | BUP314D vs HGTD7N60C3S9A |
| HGTP12N60C3 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, | Fairchild Semiconductor Corporation | BUP314D vs HGTP12N60C3 |
| IRG4BC40K | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | BUP314D vs IRG4BC40K |
| 1MB10-120 | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fuji Electric Co Ltd | BUP314D vs 1MB10-120 |