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Transistors Power Field-Effect Transistors BUZ11A

BUZ11A
Description: 25A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Overview of BUZ11A by Motorola Mobility LLC

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Part Data Attributes for BUZ11A by Motorola Mobility LLC
Parametric Data

BUZ11A
Motorola Mobility LLC
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MOTOROLA INC
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
50 V
Drain Current-Max (ID)
25 A
Drain-source On Resistance-Max
0.06 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
400 pF
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
75 W
Power Dissipation-Max (Abs)
75 W
Pulsed Drain Current-Max (IDM)
100 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
400 ns
Turn-on Time-Max (ton)
155 ns
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  1. BUZ11A
    Motorola Mobility LLC
    25A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
    VS

Alternate Parts for BUZ11A

This table gives cross-reference parts and alternative options found for BUZ11A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ11A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
RFP25N06 Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation BUZ11A vs RFP25N06
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products BUZ11A vs IRFZ30
BUZ10 Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Siemens BUZ11A vs BUZ10
BUZ11A Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG BUZ11A vs BUZ11A
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation BUZ11A vs IRFZ30
IRFZ30 30A, 50V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC BUZ11A vs IRFZ30
HUF75309P3_NL Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation BUZ11A vs HUF75309P3_NL
BUZ11A 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics BUZ11A vs BUZ11A
HUF75309P3 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ11A vs HUF75309P3
BUZ11A Power Field-Effect Transistor, 30A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors BUZ11A vs BUZ11A
Part Number Description Manufacturer Compare
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens BUZ11A vs BUZ71L
HUF76429D3ST Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation BUZ11A vs HUF76429D3ST
IRFR024NTR Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier BUZ11A vs IRFR024NTR
2SJ602-ZJ-AZ 20A, 60V, 0.107ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN Renesas Electronics Corporation BUZ11A vs 2SJ602-ZJ-AZ
2SJ174 20A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation BUZ11A vs 2SJ174
RFP14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation BUZ11A vs RFP14N05L
MTD15N06VT4 15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi BUZ11A vs MTD15N06VT4
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Vishay Siliconix BUZ11A vs BUZ71
RFD14N06L 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation BUZ11A vs RFD14N06L
HUF75309D3ST Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor BUZ11A vs HUF75309D3ST

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