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Transistors Power Field-Effect Transistors BUZ330

BUZ330
Description: Power Field-Effect Transistor, 9.5A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA

Overview of BUZ330 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Motor control systems

CAD Models for BUZ330 by Infineon Technologies AG
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Part Data Attributes for BUZ330 by Infineon Technologies AG
Parametric Data

BUZ330
Infineon Technologies AG
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
670 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
9.5 A
Drain-source On Resistance-Max
0.6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-218AA
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
Pulsed Drain Current-Max (IDM)
38 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Element Material
SILICON
Want to compare parts?
  1. BUZ330
    Infineon Technologies AG
    Power Field-Effect Transistor, 9.5A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA
    VS

Alternate Parts for BUZ330

This table gives cross-reference parts and alternative options found for BUZ330. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ330, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFP452 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor BUZ330 vs IRFP452
IRFP453 12A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics BUZ330 vs IRFP453
IRFP453 Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors BUZ330 vs IRFP453
BUZ330 9.5A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC Motorola Mobility LLC BUZ330 vs BUZ330
BUZ330 Power Bipolar Transistor New Jersey Semiconductor Products Inc BUZ330 vs BUZ330
2SK386 TRANSISTOR 10 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Toshiba America Electronic Components BUZ330 vs 2SK386
BUZ339 Power Field-Effect Transistor, 11.5A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA Siemens BUZ330 vs BUZ339
IRFP453 12A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited BUZ330 vs IRFP453
IRFP453 Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier BUZ330 vs IRFP453
2SK694 TRANSISTOR 12 A, 400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Toshiba America Electronic Components BUZ330 vs 2SK694
Part Number Description Manufacturer Compare
IRFP453 Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier BUZ330 vs IRFP453
IRFP448PBF Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix BUZ330 vs IRFP448PBF
IRFP452 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier BUZ330 vs IRFP452
IRFP452 12A, 500V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited BUZ330 vs IRFP452
IRFP453 Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors BUZ330 vs IRFP453
BUZ330 Power Bipolar Transistor New Jersey Semiconductor Products Inc BUZ330 vs BUZ330
IRFP448 Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier BUZ330 vs IRFP448
IRFP344 Power Field-Effect Transistor, 9.5A I(D), 450V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier BUZ330 vs IRFP344
IRFP452 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor BUZ330 vs IRFP452
IRFP453 12A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited BUZ330 vs IRFP453

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