Part Details for EM6A8160TSC-5G by Etron Technology Inc
Overview of EM6A8160TSC-5G by Etron Technology Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Price & Stock for EM6A8160TSC-5G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
24601922
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Verical | 4Mx16 DDR Synchronous DRAM Min Qty: 46 Package Multiple: 1 | Americas - 100 |
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$1.5406 / $1.6579 | Buy Now |
Part Details for EM6A8160TSC-5G
EM6A8160TSC-5G CAD Models
EM6A8160TSC-5G Part Data Attributes:
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EM6A8160TSC-5G
Etron Technology Inc
Buy Now
Datasheet
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Compare Parts:
EM6A8160TSC-5G
Etron Technology Inc
DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66, TSOPII-66
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | ETRON TECHNOLOGY INC | |
| Package Description | TSOP2, | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G66 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | DDR DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 10.16 mm |
Alternate Parts for EM6A8160TSC-5G
This table gives cross-reference parts and alternative options found for EM6A8160TSC-5G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EM6A8160TSC-5G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M13S64164A-4BVAG2Y | DDR DRAM, 4MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-60 | Elite Semiconductor Memory Technology Inc | EM6A8160TSC-5G vs M13S64164A-4BVAG2Y |
| M13S64164A-5BVG2Y | DDR DRAM, 4MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-60 | Elite Semiconductor Memory Technology Inc | EM6A8160TSC-5G vs M13S64164A-5BVG2Y |
| M13S64164A-6BG2Y | DDR DRAM, 4MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-60 | Elite Semiconductor Memory Technology Inc | EM6A8160TSC-5G vs M13S64164A-6BG2Y |
| EM6A8160BKC-5H | DDR DRAM, 4MX16, 0.7ns, CMOS, PBGA60, FBGA-60 | Etron Technology Inc | EM6A8160TSC-5G vs EM6A8160BKC-5H |
| M13S64164A-6TVG2Y | DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | Elite Semiconductor Memory Technology Inc | EM6A8160TSC-5G vs M13S64164A-6TVG2Y |
| M13S64164A-6TG2Y | DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | Elite Semiconductor Memory Technology Inc | EM6A8160TSC-5G vs M13S64164A-6TG2Y |
| M13S64164A-5TVG2Y | DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | Elite Semiconductor Memory Technology Inc | EM6A8160TSC-5G vs M13S64164A-5TVG2Y |
| EM6A8160BKC-4H | DDR DRAM, 4MX16, 0.7ns, CMOS, PBGA60, FBGA-60 | Etron Technology Inc | EM6A8160TSC-5G vs EM6A8160BKC-4H |
| M13S64164A-4TIG2Y | DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | Elite Semiconductor Memory Technology Inc | EM6A8160TSC-5G vs M13S64164A-4TIG2Y |
| M13S64164A-5TG2C | DDR DRAM, | Elite Semiconductor Memory Technology Inc | EM6A8160TSC-5G vs M13S64164A-5TG2C |