Part Details for EM6AB160TSE-5G by Etron Technology Inc
Overview of EM6AB160TSE-5G by Etron Technology Inc
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Price & Stock for EM6AB160TSE-5G
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
NAC | 512 Mb 32M X 16 DDR SDRAM TSOP II Comm Temp RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 21 |
|
$1.4000 / $1.7500 | Buy Now |
DISTI #
EM6AB160TSE-5G
|
Avnet Asia | DRAM Chip DDR SDRAM 512M-Bit 32M x 16 2.5V 66-Pin TSOP-II (Alt: EM6AB160TSE-5G) RoHS: Compliant Min Qty: 1080 Package Multiple: 1080 Lead time: 12 Weeks, 0 Days | 0 |
|
RFQ | |
|
Win Source Electronics | 32M x 16 bit DDR Synchronous DRAM | 28840 |
|
$1.5080 / $2.2610 | Buy Now |
Part Details for EM6AB160TSE-5G
EM6AB160TSE-5G CAD Models
EM6AB160TSE-5G Part Data Attributes
|
EM6AB160TSE-5G
Etron Technology Inc
Buy Now
Datasheet
|
Compare Parts:
EM6AB160TSE-5G
Etron Technology Inc
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, TSOPII-66
|
Rohs Code | Yes | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | ETRON TECHNOLOGY INC | |
Package Description | TSOP2-66 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.28 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.7 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-PDSO-G66 | |
Length | 22.22 mm | |
Memory Density | 536870912 bit | |
Memory IC Type | DDR DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 66 | |
Number of Words | 33554432 words | |
Number of Words Code | 32000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 32MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.65 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 10.16 mm |
Alternate Parts for EM6AB160TSE-5G
This table gives cross-reference parts and alternative options found for EM6AB160TSE-5G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EM6AB160TSE-5G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
V58C2512164SFLI5I | DDR DRAM, | ProMOS Technologies Inc | EM6AB160TSE-5G vs V58C2512164SFLI5I |
SCX25D512160AE-6BI | DDR DRAM, | Xi'an UniIC Semiconductors Co Ltd | EM6AB160TSE-5G vs SCX25D512160AE-6BI |
IS43R16320E-6TL-TR | DDR DRAM, | Integrated Silicon Solution Inc | EM6AB160TSE-5G vs IS43R16320E-6TL-TR |
V58C2512164SFLJ6 | DDR DRAM, | ProMOS Technologies Inc | EM6AB160TSE-5G vs V58C2512164SFLJ6 |
IS43R16320E-5BL | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, FBGA-60 | Integrated Silicon Solution Inc | EM6AB160TSE-5G vs IS43R16320E-5BL |
MT46V32M16CY-5BL:J | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 8 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 | Micron Technology Inc | EM6AB160TSE-5G vs MT46V32M16CY-5BL:J |
SCX25D512160AE-5BI | DDR DRAM, | Xi'an UniIC Semiconductors Co Ltd | EM6AB160TSE-5G vs SCX25D512160AE-5BI |
M13S5121632A-4TG2R | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | Elite Semiconductor Memory Technology Inc | EM6AB160TSE-5G vs M13S5121632A-4TG2R |
IS43R16320E-5TLI-TR | DDR DRAM, | Integrated Silicon Solution Inc | EM6AB160TSE-5G vs IS43R16320E-5TLI-TR |
V58C2512164SFLI5 | DDR DRAM, | ProMOS Technologies Inc | EM6AB160TSE-5G vs V58C2512164SFLI5 |