Part Details for FQI4N80TU by Fairchild Semiconductor Corporation
Overview of FQI4N80TU by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FQI4N80TU
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FQI4N80TU-ND
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DigiKey | MOSFET N-CH 800V 3.9A I2PAK Min Qty: 286 Container: Bulk MARKETPLACE PRODUCT |
1550 In Stock |
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$1.0500 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 3.9A, 800V, 3.6ohm, N-Channel, MOSFET, TO-262AA RoHS: Compliant Status: Obsolete Min Qty: 1 | 2146 |
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$0.9001 / $1.0600 | Buy Now |
Part Details for FQI4N80TU
FQI4N80TU CAD Models
FQI4N80TU Part Data Attributes:
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FQI4N80TU
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FQI4N80TU
Fairchild Semiconductor Corporation
N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω, 3LD, TO262, JEDEC VARIATION AA (I2PAK), 1000/RAIL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-262 | |
| Package Description | I2PAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 3LD, TO262, JEDEC VARIATION AA (I2PAK) | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 460 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 3.9 A | |
| Drain-source On Resistance-Max | 3.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 15.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQI4N80TU
This table gives cross-reference parts and alternative options found for FQI4N80TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQI4N80TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQI4N80 | Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | Fairchild Semiconductor Corporation | FQI4N80TU vs FQI4N80 |
| FQI4N80TU | Power MOSFET, N-Channel, QFET®, 800 V, 3.9 A, 3.6 Ω, I2PAK, 1000-TUBE | onsemi | FQI4N80TU vs FQI4N80TU |