Datasheets
H5TQ1G83BFR-G7C by: SK Hynix Inc

DDR DRAM, 128MX18, 20ns, CMOS, PBGA78, HALOGEN FREE & ROHS COMPLIANT, FPBGA-78

Part Details for H5TQ1G83BFR-G7C by SK Hynix Inc

Overview of H5TQ1G83BFR-G7C by SK Hynix Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Price & Stock for H5TQ1G83BFR-G7C

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 2 73
  • 2 $4.4800
  • 7 $2.9120
  • 19 $2.2400
  • 57 $2.0908
$2.0908 / $4.4800 Buy Now
Quest Components   58
  • 1 $6.0000
  • 3 $4.0000
  • 7 $3.0000
$3.0000 / $6.0000 Buy Now

Part Details for H5TQ1G83BFR-G7C

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H5TQ1G83BFR-G7C Part Data Attributes:

H5TQ1G83BFR-G7C SK Hynix Inc
Buy Now Datasheet
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H5TQ1G83BFR-G7C SK Hynix Inc DDR DRAM, 128MX18, 20ns, CMOS, PBGA78, HALOGEN FREE & ROHS COMPLIANT, FPBGA-78
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Part Package Code BGA
Package Description TFBGA, BGA78,9X13,32
Pin Count 78
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode MULTI BANK PAGE BURST
Access Time-Max 20 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 533 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B78
JESD-609 Code e1
Length 11 mm
Memory Density 2415919104 bit
Memory IC Type DDR3 DRAM
Memory Width 18
Number of Functions 1
Number of Ports 1
Number of Terminals 78
Number of Words 134217728 words
Number of Words Code 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 128MX18
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA78,9X13,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Supply Current-Max 0.16 mA
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width 7.5 mm

Alternate Parts for H5TQ1G83BFR-G7C

This table gives cross-reference parts and alternative options found for H5TQ1G83BFR-G7C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H5TQ1G83BFR-G7C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
EDJ1108BDSE-AE-F DDR DRAM, 128MX8, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 Elpida Memory Inc H5TQ1G83BFR-G7C vs EDJ1108BDSE-AE-F
H5TQ1G83BFR-G7I DDR DRAM, 128MX18, 0.3ns, CMOS, PBGA78, HALOGEN FREE & ROHS COMPLIANT, FPBGA-78 SK Hynix Inc H5TQ1G83BFR-G7C vs H5TQ1G83BFR-G7I
Part Number Description Manufacturer Compare
K4B2G0846C-HCH90 DDR DRAM, 256MX8, 0.25ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 Samsung Semiconductor H5TQ1G83BFR-G7C vs K4B2G0846C-HCH90
NT5CB256M8BN-BE DDR DRAM, 256MX8, 0.3ns, CMOS, PBGA78, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-78 Nanya Technology Corporation H5TQ1G83BFR-G7C vs NT5CB256M8BN-BE
MT41J256M8DA-107IT:M DDR DRAM, 256MX8, CMOS, PBGA78, 8 X 10.50 MM, LEAD FREE, FBGA-78 Micron Technology Inc H5TQ1G83BFR-G7C vs MT41J256M8DA-107IT:M
MT41J256M8DA-107:H DDR DRAM, 256MX8, CMOS, PBGA78, 8 X 10.50 MM, LEAD FREE, FBGA-78 Micron Technology Inc H5TQ1G83BFR-G7C vs MT41J256M8DA-107:H
MT41J128M8JP-15E:F DDR DRAM, 128MX8, 0.125ns, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 Micron Technology Inc H5TQ1G83BFR-G7C vs MT41J128M8JP-15E:F
K4B1G0846G-BCMA0 DDR DRAM, 128MX8, 0.195ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 Samsung Semiconductor H5TQ1G83BFR-G7C vs K4B1G0846G-BCMA0
MT41J256M8DA-107AIT:H DDR DRAM, 256MX8, CMOS, PBGA78, FBGA-78 Micron Technology Inc H5TQ1G83BFR-G7C vs MT41J256M8DA-107AIT:H
K4B2G0846B-HCF70 DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 Samsung Semiconductor H5TQ1G83BFR-G7C vs K4B2G0846B-HCF70
MT41J128M8JP-187:F DDR DRAM, 128MX8, 0.15ns, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 Micron Technology Inc H5TQ1G83BFR-G7C vs MT41J128M8JP-187:F
MT41J256M8HX-15IT:D DDR DRAM, 32MX8, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 Micron Technology Inc H5TQ1G83BFR-G7C vs MT41J256M8HX-15IT:D

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