Part Details for HYB18T1G160CFL-2.5 by Qimonda AG
Overview of HYB18T1G160CFL-2.5 by Qimonda AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Entertainment and Gaming
Part Details for HYB18T1G160CFL-2.5
HYB18T1G160CFL-2.5 CAD Models
HYB18T1G160CFL-2.5 Part Data Attributes:
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HYB18T1G160CFL-2.5
Qimonda AG
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Datasheet
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HYB18T1G160CFL-2.5
Qimonda AG
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | QIMONDA AG | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA84,9X15,32 | |
| Pin Count | 84 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 400 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B84 | |
| Length | 13.5 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 84 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA84,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.01 A | |
| Supply Current-Max | 0.268 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 10 mm |
Alternate Parts for HYB18T1G160CFL-2.5
This table gives cross-reference parts and alternative options found for HYB18T1G160CFL-2.5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB18T1G160CFL-2.5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYB18T1G160CF-25F | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Qimonda AG | HYB18T1G160CFL-2.5 vs HYB18T1G160CF-25F |
| MT47H32M16GC-25EAT:B | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 12 X 12.50 MM, FBGA-84 | Micron Technology Inc | HYB18T1G160CFL-2.5 vs MT47H32M16GC-25EAT:B |
| MT47H64M16NF-25EAAT:M | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | HYB18T1G160CFL-2.5 vs MT47H64M16NF-25EAAT:M |
| EDE1116ACBG-8E-E | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | Elpida Memory Inc | HYB18T1G160CFL-2.5 vs EDE1116ACBG-8E-E |
| MT47H32M16CC-25AT:B | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 12 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | HYB18T1G160CFL-2.5 vs MT47H32M16CC-25AT:B |
| K4T1G164QE-HLF70 | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | HYB18T1G160CFL-2.5 vs K4T1G164QE-HLF70 |
| MT47H64M16B7-25IT:D | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 10 X 16.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | HYB18T1G160CFL-2.5 vs MT47H64M16B7-25IT:D |
| NT5TB64M16DG-AC | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 0.80 MM PITCH, ROHS COMPLIANT, BGA-84 | Nanya Technology Corporation | HYB18T1G160CFL-2.5 vs NT5TB64M16DG-AC |
| K4T1G164QQ-HCE70 | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | HYB18T1G160CFL-2.5 vs K4T1G164QQ-HCE70 |
| NT5TU64M16DE-ACI | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, BGA-84 | Nanya Technology Corporation | HYB18T1G160CFL-2.5 vs NT5TU64M16DE-ACI |