Datasheets
IPB120N04S404ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN

Part Details for IPB120N04S404ATMA1 by Infineon Technologies AG

Overview of IPB120N04S404ATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPB120N04S404ATMA1

Part # Distributor Description Stock Price Buy
Rochester Electronics IPB120N04 - 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 1000
  • 1 $1.0500
  • 25 $1.0300
  • 100 $0.9844
  • 500 $0.9425
  • 1,000 $0.8901
$0.8901 / $1.0500 Buy Now

Part Details for IPB120N04S404ATMA1

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IPB120N04S404ATMA1 Part Data Attributes

IPB120N04S404ATMA1 Infineon Technologies AG
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IPB120N04S404ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 120A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-263, 3/2 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Avalanche Energy Rating (Eas) 75 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 480 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPB120N04S404ATMA1

This table gives cross-reference parts and alternative options found for IPB120N04S404ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB120N04S404ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CSD18511KTTT 40-V, N channel NexFET™ power MOSFET, single D2PAK, 2.6 mOhm 2-DDPAK/TO-263 -55 to 175 Texas Instruments IPB120N04S404ATMA1 vs CSD18511KTTT
CSD18511KCS 40-V, N channel NexFET™ power MOSFET, single TO-220, 2.6 mOhm 3-TO-220 -55 to 175 Texas Instruments IPB120N04S404ATMA1 vs CSD18511KCS
STB190NF04 120A, 40V, 0.0043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, D2PAK-3 STMicroelectronics IPB120N04S404ATMA1 vs STB190NF04
STB200N4F3 120A, 40V, 0.004ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 STMicroelectronics IPB120N04S404ATMA1 vs STB200N4F3
STP190NF04 120A, 40V, 0.0043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN STMicroelectronics IPB120N04S404ATMA1 vs STP190NF04

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