| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFBE30L | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IRFBE30LPBF vs IRFBE30L |
| IRFBE30LPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IRFBE30LPBF vs IRFBE30LPBF |
| SIHFBE30L-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR 4.1 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power | IRFBE30LPBF vs SIHFBE30L-GE3 |
| IRFBE30LPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IRFBE30LPBF vs IRFBE30LPBF |
Part Details for IRFBE30LPBF by Vishay Intertechnologies
Results Overview of IRFBE30LPBF by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (4 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (3 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFBE30LPBF Information
IRFBE30LPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFBE30LPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
63J6694
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Newark | N Channel Mosfet, 800V, 4.1A I2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:4.1A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.1510 / $1.3194 | Buy Now |
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DISTI #
IRFBE30LPBF
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TME | Transistor: N-MOSFET, unipolar, 800V, 2.6A, Idm: 16A, 125W Min Qty: 1 | 0 |
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$1.2300 / $3.0600 | RFQ |
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DISTI #
844-IRFBE30LPBF
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Mouser Electronics | MOSFETs N-Chan 800V 4.1 Amp RoHS: Compliant | 8918 |
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$1.3400 / $3.7900 | Buy Now |
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DISTI #
IRFBE30LPBF
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TTI | MOSFETs N-Chan 800V 4.1 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 500 In Stock |
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$1.3900 / $1.8400 | Buy Now |
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|
Future Electronics | Single N-Channel 800 V 3 Ohms Surface Mount Power Mosfet - TO-262 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 20 Weeks Container: Tube | 0Tube |
|
$4.2300 / $4.4300 | Buy Now |
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Bristol Electronics | Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-262 | 1020 |
|
RFQ |
IRFBE30LPBF Part Data Attributes
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IRFBE30LPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFBE30LPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-262AA | |
| Pin Count | 3 | |
| Similar Group | Tr0810021002yyyy10051246 | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 260 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 4.1 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRFBE30LPBF
This table gives cross-reference parts and alternative options found for IRFBE30LPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBE30LPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
IRFBE30LPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFBE30LPBF is -55°C to 175°C.
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The IRFBE30LPBF is a logic-level MOSFET, which means it can be driven by a logic gate or a microcontroller output.
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The maximum current rating for the IRFBE30LPBF is 30A.
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The IRFBE30LPBF is a surface-mount device (SMD) in a QFN (Quad Flat No-Lead) package.
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The maximum voltage rating for the IRFBE30LPBF is 30V.